The interfacial reaction between ultrathin Co film and substrate Si(100) was studied by in situ XPS using monochromatized Al Ka. When the Co is deposited on Si(100) at room temperature, CoSi 2 is formed during the initial stage of Co deposition and then metallic Co starts to grow sequentially. For 8 ML Co deposition on Si(100) the interfacial reaction layer is relatively thin compared with the pure Co overlayer, which is not involved in the interfacial reaction in depth. The Co layers change rapidly to CoSi layers after annealing at 270• C, and then CoSi 2 layers form after annealing at 540 • C for 2 min. The CoSi 2 layers are changed to CoSi 2 islands by post-annealing at >650• C.

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Abstract-In this paper, Ni silicide is formed on boron cluster (B 18 H 22 ) implanted source/drains for shallow junctions of nano-scale CMOSFETs and its thermal stability is improved, using vacuum annealing. Although Ni silicide on B 18 H 22 implanted Si substrate exhibited greater sheet resistance than on the BF 2 implanted one, its thermal stability was greatly improved using vacuum annealing. Moreover, the boron depth profile, using vacuum post-silicidation annealing, showed a shallower junction than that using N 2 annealing.

The leakage current mechanism of Palladium (Pd) germanide Schottky contact on n-type Ge-on-Si substrate is analyzed in depth. The electric field dependent analysis shows that the dominant leakage current mechanism is the Poole-Frenkel emission due to the existence of deep level traps in the depletion region of the Pd germanide/n-type Ge Schottky diode. The analysis of the dependence of leakage current on temperature also shows that the Poole-Frenkel emission and generation current are the dominant components below 100 degrees C and that the Schottky emission related to thermionic emission of majority carriers over a potential barrier is the main cause of this dominance at high temperature region.

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