A Correlation Between Oxygen Vacancies and Reliability Characteristics in a Single Zirconium Oxide Metal-Insulator-Metal Capacitor

Kwon, Hyuk Min; Kwon, Sung Kyu; Jeong, Kwang Seob; Oh, Se-Kyung; Oh, Seungmin; Choi, Woon Il; Kim, Tae Woo; Kim, Dae Hyun; Kang, Chang Yong; Lee, Byoung Hun; Kirsch, P. D.; Lee, Hi Deok

doi:10.1109/ted.2014.2326423

Cited by 11 publications

(8 citation statements)

References 53 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The TDDB distribution was summarized as a Weibull plot, which was calculated as a cumulative probability density function (CDF), as shown in Figure 4b. Particularly, when ln(–ln(1 − CDF)) = 0, which represents the lifetime, the experimental [21] and simulation results were consistent.…”

Section: Resultsmentioning

confidence: 55%

“…Based on the thermochemical model, the probability of bonding breaking ( P BD ) is PBD=exp(−∆H0kBT+γE) where ∆ H 0 is the enthalpy of activation for bond breakage, k B is the Boltzmann’s constant, T is the temperature, γ is the field acceleration parameter, and E is the applied electric field. The main parameters were ∆ H 0 = 1.874 eV and γ = 8.67 cm/MV [21]. The newly generated trap was affected by the existing trap.…”

Section: Resultsmentioning

confidence: 99%

“…( b ) Bird’s-eye and cross-sectional views of a simulated TiN/ZrO 2 /TiN capacitor. ( c ) Calibrated simulation data compared with experimental data [21]. It is worth noting that the leakage current at a low bias is ignored, as only the shallow trap level, which originates from oxygen vacancies, is considered [20].…”

Section: Figurementioning

confidence: 99%

See 2 more Smart Citations

A Technology-Computer-Aided-Design-Based Reliability Prediction Model for DRAM Storage Capacitors

et al. 2019

View full text Add to dashboard Cite

show abstract

Section: Resultsmentioning

confidence: 55%

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

A Technology-Computer-Aided-Design-Based Reliability Prediction Model for DRAM Storage Capacitors

et al. 2019

View full text Add to dashboard Cite

show abstract

“…This tunneling also prevents the generation of a sufficient number of carriers, which results in low mobility and, in turn, leads to a decrease in the on-state current, transconductance, and reliability because of high hysteresis [ 15 , 16 , 17 ]. Moreover, it has been reported that when a specific voltage stress is applied to the device, electrons are more likely to become trapped in these oxide traps [ 18 , 19 ].…”

Section: Introductionmentioning

confidence: 99%

Characterization of Electrical Traps Formed in Al2O3 under Various ALD Conditions

2020

Self Cite

View full text Add to dashboard Cite

Frequency dispersion in the accumulation region seen in multifrequency capacitance–voltage characterization, which is believed to be caused mainly by border traps, is a concerning issue in present-day devices. Because these traps are a fundamental property of oxides, their formation is expected to be affected to some extent by the parameters of oxide growth caused by atomic layer deposition (ALD). In this study, the effects of variation in two ALD conditions, deposition temperature and purge time, on the formation of near-interfacial oxide traps in the Al2O3 dielectric are examined. In addition to the evaluation of these border traps, the most commonly examined electrical traps—i.e., interface traps—are also investigated along with the hysteresis, permittivity, reliability, and leakage current. The results reveal that a higher deposition temperature helps to minimize the formation of border traps and suppress leakage current but adversely affects the oxide/semiconductor interface and the permittivity of the deposited film. In contrast, a longer purge time provides a high-quality atomic-layer-deposited film which has fewer electrical traps and reasonable values of permittivity and breakdown voltage. These findings indicate that a moderate ALD temperature along with a sufficiently long purge time will provide an oxide film with fewer electrical traps, a reasonable permittivity, and a low leakage current.

show abstract

“…This creates a frequency dependent capacitance response in the accumulation and these traps are also responsible for dilapidation of mobility, on-state current, transconductance, and reliability by causing high hysteresis, threshold voltage instability, and phonon scattering [10][11][12]14]. Moreover, as a reliability issue, it has already been reported that the constant-voltage-stress (CVS) is responsible for electron trapping in these acceptors like oxide traps as well as the creation of new oxygen vacancy defects [8,15,16].…”

Section: Introductionmentioning

confidence: 99%

Border Trap Characterizations of Al2O3/ZrO2 and Al2O3/HfO2 Bilayer Films Based on Ambient Post Metal Annealing and Constant Voltage Stress

Rahman

Kim

2020

Nanomaterials

Self Cite

View full text Add to dashboard Cite

This study represents a comparison of the border trap behavior and reliability between HfO2 and ZrO2 films on n-In0.53Ga0.47As with an Al2O3 interfacial layer. The effect of different post metal annealing conditions on the trap response was analyzed and it was found that the N2:H2 mixed FGA passivates the border trap quite well, whereas N2-based RTA performs better on interface traps. Al2O3/HfO2 showed more degradation in terms of the threshold voltage shift while Al2O3/ZrO2 showed higher leakage current behavior. Moreover, Al2O3/ZrO2 showed a higher permittivity, hysteresis, and breakdown field than Al2O3/HfO2.

show abstract

A Correlation Between Oxygen Vacancies and Reliability Characteristics in a Single Zirconium Oxide Metal-Insulator-Metal Capacitor

Cited by 11 publications

References 53 publications

A Technology-Computer-Aided-Design-Based Reliability Prediction Model for DRAM Storage Capacitors

A Technology-Computer-Aided-Design-Based Reliability Prediction Model for DRAM Storage Capacitors

Characterization of Electrical Traps Formed in Al2O3 under Various ALD Conditions

Border Trap Characterizations of Al2O3/ZrO2 and Al2O3/HfO2 Bilayer Films Based on Ambient Post Metal Annealing and Constant Voltage Stress

Contact Info

Product

Resources

About