A simple method to suppress INWE of transistor based on STI technology has been demonstrated in this paper. In order to prevent the boron out-diffusion through the trench sidewall, the nitric oxide (NO)-annealed wall oxidation is performed before the gap-filling process. By reviewing the electrical properties of n-and p-MOSTs, it has been confirmed that INWE of n-MOST can be easily suppressed without any problem in p-MOST, and the uniformity of parameter can be remarkably improved by this method. Also, the gate oxide integrity and the junction leakage current have been evaluated in the device reliability point of view, and it is confirmed that there are no problems to use this technique in STI technology.

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A full three-dimensional technology-computer-aided-design-based reliability prediction model was proposed for dynamic random-access memory (DRAM) storage capacitors. The model can be used to predict the time-dependent dielectric breakdown as well as leakage current of a state-of-the-art DRAM storage capacitor with a complex three-dimensional structure.

N-WELL floating base is sandwiched between P+ emitter and P-WELL collector in the proposed floating base vertical PNP electro-static discharge (ESD) protection device. Floating base bipolar junction transistor (BJT) ESD protection device increases the current performance of the parasitic BJT in the ESD mode. During the negative voltage phase of RF antenna signal, the negative voltage range of RF antenna signal is extended to around −10 V at the high RF power field without latch-up failure. The minimum P+ anode layout area of the floating base type BJT ESD device is 400 µm 2 for the target ESD voltage of 2000 V in human body model (HBM) mode. The parasitic capacitance of the floating base type BJT ESD protection device is about 0.4 pF. The layout area of the proposed floating base type BJT ESD protection device is 50% smaller that of the conventional NMOS diode type ESD protection device for the target ESD voltage of 2000 V in HBM mode. The rewards of the floating base type BJT ESD device will come in the form of improved yields, higher reliability, and substantially lower costs of RFID chip manufacturing.

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