Improvement of Uniformity of Resistive Switching Parameters by Selecting the Electroformation Polarity in IrO_x/TaO_x/WO_x/W Structure

Abstract

A route to improve the uniformity of key resistive switching memory parameters such as SET/RESET voltages, low/high-resistance states as well as switching cycles is demonstrated in an IrO x /TaO x /WO x /W simple resistive memory stack by selecting the electroformation polarity. The various stack layers are confirmed by high-resolution transmission electron microscopy, energy dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy analyses. Cumulative probability plots of the key memory parameters show tight distribution. The oxygen vacancy filaments are formed/ruptured owing to polarity-dependent oxygen ion migration, which is the switching mechanism in the TaO x /WO x bilayers, and improved resistive switching parameters under positive formation polarity are observed. The fabricated device has shown good potential for multilevel capability with a low voltage operation of ±3 V. The device has shown an excellent read endurance of >105 cycles and data retention up to 10 years at 85 °C.

A forming-free ReRAM cell with low operating voltage

“…[12,27] Although this chemical reaction also leaves abundant oxygen vacancies in the oxide layer, these defects occupy shallower energy levels (from ∼ 0.25 eV to ∼ 0.57 eV) and trend to construct a conductive filament acting as a virtual electrode. [28][29][30] Therefore, resistive switching only happens in the thin TiO 2− zone in this study, as shown in Fig. 4.…”

Memristive Behavior in Electrohydrodynamic Atomized Layers of Poly[2-methoxy-5-(2'-ethylhexyloxy)–(p-phenylenevinylene)] for Next Generation Printed Electronics

“…30,31) Switching mechanism in the fabricated resistive switch has been explained with the help of slope fitting in I-V graph as reported in the literature. [32][33][34][35] The I-V graph has been drawn in log-log scale for the HRS as shown in Fig. 8.…”