Improvement of wire electrical discharge machining efficiency in machining polycrystalline silicon with auxiliary-pulse voltage supply

A progress review in wire electrical discharge machining process

“…The surface of gears appears to have chips sized 60 m and between 40-60 m when machining by using water and oil, respectively [24,25]. Comparison of machining feasibility of poly crystalline silicon material with auxilliary pulse supply and conventional-pulse voltage supply mode was attempted by [71]. It was observed that the auxilliary pulse supply effectively broke the polysilicon insulation and avoided delay in electrical discharge that contributed to effectiveness.…”

“…Inference Rhoney et al [22] Truing of metal bonded diamond grinding wheel Badami et al [15] Fine pitch threads generated on superinvar material 40 TPI threads were produced Miller et al [21] Machining of porous metal foams, metal bonded diamond grinding wheel, sintered Nd-Fe-B magnets, and carbon-carbon bipolar plates Miller et al [21], [23][24][25] Machining of polished single crystal silicon (oil and water as dielectric medium); contouring of polished single crystal silicon plates Yu et al [71] Machining of poly-crystalline silicon using auxiliary pulse supply Lee et al [20] Machining of n-type high purity germanium (HP Ge) Yeh et al [72] Machining of polycrystalline silicon using phosphorous as dielectric medium Cheng et al [16] Generation of helical profiles on ultra-hard materials Gupta and Jain [75] Manufacture a miniature spur gear having total profile deviation of 13.20 µm, total lead deviation of 5.40 µm, and average surface roughness of 1.00 µm Greer et al [74] Parametric study on magnetic property of NdFeB permanent magnets material Hou et al [73] Parametric study on machining of zirconia Bae et al [76] Manufacture deep grooves of different depth to enhance super superior hydrophobic property Bobbili et al [77] Machinability of hot pressed boron carbide material Dongree et al [17] Silicon wafer slicing Gee et al [18], Gee et al [19] Studied the variation in thickness of deterioration layer of monocrystalline silicon Ayesta et al [80] Compared the fatigue life of WEDMed Inconel 718 material with that of ground specimen Joshi et al [82] Manufacture of ultra-thin silicon wafer with 140.5 m slicing size at the rate of 0.96 mm/min…”

Increasing the productivity of the wire-cut electrical discharge machine associated with sustainable production

“…On the other hand, surface finish would decrease with increasing the discharge voltage, current, and pulse width (Yeh et al, 2013;Yu et al, 2011).…”

Multi-objective optimization for silicon wafer slicing using wire-EDM process

“…However, Yu et al [9] used auxiliary pulse voltage supply, with a higher auxiliary voltage for breaking the insulation between electrode and poly-silicon workpiece during pulse on-time. Their experimental study shows that auxiliary pulse voltage supply can effectively break insulation for discharge.…”

“…The use of auxiliary power supply instead of conventional power supply reduces the kerf width. It was evident that the application of an auxiliary voltage results in the generation of strong electric field which reduces the open voltage quickly to a lower gap voltage and results in the reduction of the kerf [9].The wire tension is one of the important parameters Contents lists available at ScienceDirect journal homepage: www.elsevier.com/locate/matsci that govern the kerf width accuracy. It is reported that an increase in wire tension decreases the kerf width by 20%.…”