Improvement on the Stability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using Amorphous Oxide Multilayer Source/Drain Electrodes

Lee, Sang Yeol

doi:10.4313/teem.2016.17.3.143

Cited by 3 publications

(2 citation statements)

References 13 publications

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“…It is found that some complex oxides have ferromagnetic, ferroelectric, and magnetoresistive effects, which allows complex oxides to be implemented into important applications in the field of microelectronics. For example, amorphous a-IGZO [103] and perovskite metal-oxides [104], have been exploited to facilitate the advancement of microelectronics under the bottleneck of Moore's law.…”

Section: Complex Metal Oxidesmentioning

confidence: 99%

Degradable and Dissolvable Thin-Film Materials for the Applications of New-Generation Environmental-Friendly Electronic Devices

et al. 2020

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Featured Application: Thin-film materials with degradability and recyclability for the fabrication of degradable, dissolvable, resorbable, and/or compatible electronic devices, especially transient resistive switching devices for security information storage and neuromorphic computing as well as environmental-friendly applications.Abstract: The environmental pollution generated by electronic waste (e-waste), waste-gas, and wastewater restricts the sustainable development of society. Environmental-friendly electronics made of degradable, resorbable, and compatible thin-film materials were utilized and explored, which was beneficial for e-waste dissolution and sustainable development. In this paper, we present a literature review about the development of various degradable and disposable thin-films for electronic applications. The corresponding preparation methods were simply reviewed and one of the most exciting and promising methods was discussed: Printing electronics technology. After a short introduction, detailed applications in the environment sensors and eco-friendly devices based on these degradable and compatible thin-films were mainly reviewed, finalizing with the main conclusions and promising perspectives. Furthermore, the future on these upcoming environmental-friendly electronic devices are proposed and prospected, especially on resistive switching devices, showing great potential applications in artificial intelligence (AI) and the Internet of Thing (IoT). These resistive switching devices combine the functions of storage and computations, which can complement the off-shelf computing based on the von Neumann architecture and advance the development of the AI.

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Section: Complex Metal Oxidesmentioning

confidence: 99%

Degradable and Dissolvable Thin-Film Materials for the Applications of New-Generation Environmental-Friendly Electronic Devices

et al. 2020

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“…Recently, attention has been focused on the zink based oxide (ZnO) semiconductors due to their superior characteristics that include a flexibility and transparency for application to electronic devices [1][2][3][4][5][6]. One promising candidate material for electronic device oxide semiconductors is a zink tin oxide (ZTO), made by mixing of ZnO : SnO 2 =1 : 1.…”

Section: Introductionmentioning

confidence: 99%

A Study on an Oxygen Vacancy and Conductivity of Oxide Thin Films Deposited by RF Magnetron Sputtering and Annealed in a Vacuum

Oh¹

2017

Transactions on Electrical and Electronic Materials

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Usually, the oxygen vacancy is an important factor in an oxide semiconductor device because the conductivity is related to the oxygen vacancy, which is formed at the interface between oxide semiconductors and electrodes with an annealing processes. ZTO is made by mixing n-type ZnO and p-type SnO 2 . Zink tin oxide (ZTO), zink oxide (ZnO) and tin oxide (SnO 2 ) thin films deposited by RF magnetron sputtering and annealed, to generate the oxygen vacancy, were analyzed by XPS spectra. The contents of oxygen vacancy were the highest in ZTO annealed at 150 o C℃ , ZnO annealed at 200 o C and SnO 2 annealed at 100 o C. The current was also increased with increasing the oxygen vacancy ions. The highest content of ZTO oxygen vacancies was obtained when annealed at 150 ℃ . This is the middle level in compared with those of ZnO annealed at 200 o C and SnO 2 annealed at 100 o C℃ . The electrical properties of ZTO followed those of SnO 2 , which acts a an enhancer in the oxide semiconductor.

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Improvement in Device Performance of Vertical Thin-Film Transistors Using Atomic Layer Deposited IGZO Channel and Polyimide Spacer

Kim

Kang

Kim

et al. 2017

IEEE Electron Device Lett.

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Improvement on the Stability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using Amorphous Oxide Multilayer Source/Drain Electrodes

Cited by 3 publications

References 13 publications

Degradable and Dissolvable Thin-Film Materials for the Applications of New-Generation Environmental-Friendly Electronic Devices

Degradable and Dissolvable Thin-Film Materials for the Applications of New-Generation Environmental-Friendly Electronic Devices

A Study on an Oxygen Vacancy and Conductivity of Oxide Thin Films Deposited by RF Magnetron Sputtering and Annealed in a Vacuum

Improvement in Device Performance of Vertical Thin-Film Transistors Using Atomic Layer Deposited IGZO Channel and Polyimide Spacer

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