Improvements in anti-reflection coatings for high-efficiency silicon solar cells

Cid, M.; Stem, N.; Brunetti, Cristiano; Beloto, A.F.; Ramos, C.A.

doi:10.1016/s0257-8972(98)00499-x

Cited by 86 publications

(52 citation statements)

References 6 publications

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“…It has also been used as a high-index material of Ta 2 O 5 /SiO 2 multilayered photonic-crystal elements for the visible to near-infrared range fabricated using radio-frequency (RF) bias sputtering [1] [2]. Additionally, it can be used as an anti-reflection coating material for silicon solar cells [3]. Many studies on rare-earth-doped Ta 2 O 5 have been conducted because Ta 2 O 5 is a promising host material for new phosphors due to its lower phonon energy than other popular oxide materials such as SiO 2 [4].…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence and X-Ray Diffraction Properties of Europium and Silver Co-Doped Tantalum-Oxide Thin Films Deposited by Co-Sputtering

Shimada¹,

Miura²,

Fujii³

et al. 2017

MSCE

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We fabricated europium and silver co-doped tantalum-oxide (Ta 2 O 5 :Eu, Ag) thin films using a simple co-sputtering method for the first time, and we evaluated their photoluminescence (PL) and X-ray diffraction (XRD) properties. We found that the most remarkable PL peak at a wavelength of 615 nm due to Eu 3+ can be enhanced by Ag doping, and the strongest PL peak can be obtained from a Ta 2 O 5 :Eu, Ag thin film after annealing at 1000˚C. Based on XRD measurements, we found that Ag 2 Ta 8 O 21 crystalline phases produced by Ag doping are very important and Eu 3 TaO 7 phases should be avoided in order to enhance the objective PL peak from our Ta 2 O 5 :Eu, Ag thin films.

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Section: Introductionmentioning

confidence: 99%

Photoluminescence and X-Ray Diffraction Properties of Europium and Silver Co-Doped Tantalum-Oxide Thin Films Deposited by Co-Sputtering

Shimada¹,

Miura²,

Fujii³

et al. 2017

MSCE

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“…It has also been used as a high-index material of Ta 2 O 5 /SiO 2 multilayered photonic-crystal elements for the visible to near-infrared range fabricated using the autocloning method based on radio-frequency (RF) bias sputtering [1][2][3], and it can additionally be used as an anti-reflection coating material for silicon solar cells [4].…”

Section: Introductionmentioning

confidence: 99%

Fabrication and evaluation of green-light emitting Ta 2 O 5 :Er, Ce co-sputtered thin films

et al. 2015

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a b s t r a c tErbium and cerium co-doped tantalum-oxide (Ta 2 O 5 :Er, Ce) thin films were fabricated using radio-frequency co-sputtering of Ta 2 O 5 , Er 2 O 3 , and CeO 2 for the first time. Enhanced green-light emission due to Er 3+ that seems to be sensitized by Ce 3+ was observed from the film annealed at 900°C for 20 min. From XRD measurements of the films, the b-Ta 2 O 5 (orthorhombic), d-Ta 2 O 5 (hexagonal), and (2 0 1) Ta 2 O 5 phases seem to be very important for obtaining green PL from them. Such Ta 2 O 5 :Er, Ce co-sputtered films can be used as high-refractive-index materials of autocloned photonic crystals that can be applied to novel green-light-emitting devices, and they will also be used as multi-functional coating films that can work both as anti-reflection and down-conversion films for realizing high-efficiency silicon solar cells.

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“…It can be widely applicable to various passive/active optoelectronics elements such as anti-reflection coatings for silicon solar cells [1], photonic crystals fabricated using the autocloning method [2] [3], and novel phosphors doped with rare-earths [4]. We have so far prepared various rareearth (Er, Eu, Yb, Tm, Y, and Ce) doped Ta 2 O 5 thin films using radio-frequency (RF) magnetron co-sputtering of rare-earth oxide (Er 2 Furthermore, we have also prepared copper (II) oxide (CuO) and Ta 2 O 5 co-sputtered (CuO-Ta 2 O 5 ) films using the same co-sputtering method, and we have evaluated X-ray diffraction (XRD) and PL properties of the films after annealing [19].…”

Section: Introductionmentioning

confidence: 99%

Preparation of Cr2O3-Ta2O5 Composites Using RF Magnetron Sputtering

Miura¹,

Osawa²,

Yokota³

et al. 2015

OALib

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We prepared Cr 2 O 3 -Ta 2 O 5 composite films using our RF magnetron co-sputtering method for the first time. X-ray diffraction (XRD) patterns and photoluminescence (PL) spectra of the films annealed at 700˚C, 800˚C, 900˚C, and 1000˚C were evaluated. From their XRD patterns, the Cr 2 O 3 -Ta 2 O 5 film annealed at 700˚C seemed to be almost amorphous, and the one annealed at 800˚C seemed to be hexagonal Ta 2 O 5 doped with Cr. In addition, the Cr 2 O 3 -Ta 2 O 5 films annealed at 900˚C and 1000˚C seemed to include tetragonal CrTaO 4 phases. Furthermore, it seems that almost no defect exists in our Cr 2 O 3 -Ta 2 O 5 composite films annealed at 700˚C -1000˚C because their PL spectra have no defect-related peak. We thus find that good-quality Cr 2 O 3 -Ta 2 O 5 composite films including CrTaO 4 can be obtained using our very simple co-sputtering method and subsequent annealing above 900˚C.

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Improvements in anti-reflection coatings for high-efficiency silicon solar cells

Cited by 86 publications

References 6 publications

Photoluminescence and X-Ray Diffraction Properties of Europium and Silver Co-Doped Tantalum-Oxide Thin Films Deposited by Co-Sputtering

Photoluminescence and X-Ray Diffraction Properties of Europium and Silver Co-Doped Tantalum-Oxide Thin Films Deposited by Co-Sputtering

Fabrication and evaluation of green-light emitting Ta 2 O 5 :Er, Ce co-sputtered thin films

Preparation of Cr2O3-Ta2O5 Composites Using RF Magnetron Sputtering

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