Improving InP High Electron Mobility Transistor Performance by an Inserting Blocking Diode for Terahertz Applications

Derrouiche, Soufiane; Bouazza, B.; Sayah, Choukria

doi:10.1166/sl.2018.4012

sens lett

2018

DOI: 10.1166/sl.2018.4012

|View full text |Cite

Improving InP High Electron Mobility Transistor Performance by an Inserting Blocking Diode for Terahertz Applications

Soufiane Derrouiche¹,

B. Bouazza²,

Choukria Sayah³

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2020

Publication Types

Select...

Article1

Relationship

Self Cite0

Independent1

Authors

Journals

Cited by 1 publication

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

Investigation of New Multi-Channel HEMT Based on InAs0.3P0.7/InP for Future Power Terahertz HEMT’s

Derrouiche

2020

Int. J. Nanosci.

View full text Add to dashboard Cite

In this paper, we perform the increase of cut-off frequency for a HEMT based on the InP substrate by the use of a new concept which can be presented by the use of a Multi-Channel (M-Ch) based on InAs[Formula: see text]P[Formula: see text]/InP. This concept leads to formation of two confining interfaces and also an added barrier in the channel level which in turn leads to enhance the confining conditions of charge carriers. The obtained cut-off frequency for the proposed HEMT based on InAs[Formula: see text]P[Formula: see text]/InP has reached the Tera-hertz range which is the best of all existing power technologies. This morphology of structure is the first power structure that has reached this frequency range due to the use of InAs[Formula: see text]P[Formula: see text] as the main channel, it has better transport proprieties compared to that of InP. The same task is for the drain current in which the proposed structure has shown a high value compared to the structure based on a single-channel (S-Ch) formed by InP due to increasing confining interface number where the booth interface InAlAs/InAsP and InAsP/InP are being used.

show abstract

Investigation of New Multi-Channel HEMT Based on InAs0.3P0.7/InP for Future Power Terahertz HEMT’s

Derrouiche

2020

Int. J. Nanosci.

View full text Add to dashboard Cite

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Improving InP High Electron Mobility Transistor Performance by an Inserting Blocking Diode for Terahertz Applications

Cited by 1 publication

References 0 publications

Investigation of New Multi-Channel HEMT Based on InAs0.3P0.7/InP for Future Power Terahertz HEMT’s

Investigation of New Multi-Channel HEMT Based on InAs0.3P0.7/InP for Future Power Terahertz HEMT’s

Contact Info

Product

Resources

About