Improving the ALD-grown Y 2 O 3 /Ge interface quality by surface and annealing treatments

Zimmermann, C.; Bethge, Ole; Winkler, Karl-Heinz A.; Lutzer, Bernhard; Bertagnolli, E.

doi:10.1016/j.apsusc.2016.02.066

Cited by 14 publications

(7 citation statements)

References 29 publications

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“…Since rare earth oxides (REOs) reveal high affinity to Ge atoms and so, several research groups have extensively investigated the behaviour of various REOs such as La 2 O 3 , CeO 2 , Gd 2 O 3 , Dy 2 O 3 , Y 2 O 3 , Tm 2 O 3 , and Sm 2 O 3 for improving the limitations of GeO 2 /Ge interface. [18][19][20][21][22][23][24][25][26][27] It has been reported that deposition of REOs as high-k on the GeO 2 /Ge shows better potential in improving both thermal and electrical properties than those of transitional metal oxides such as HfO 2 and Al 2 O 3 . 26,28,29 The key reason for such improvement has been pointed due to spontaneous growth of rare earth germanate (RE-O-Ge) interfacial layer (IL) caused by catalytic oxidation of Ge atoms through the vigorous reaction between REOs and Ge interface.…”

Section: Introductionmentioning

confidence: 99%

“…Fortunately, the rapid progress of high‐ k materials opened the door towards using mutual geometry of both high‐ k material and Ge simultaneously. Since rare earth oxides (REOs) reveal high affinity to Ge atoms and so, several research groups have extensively investigated the behaviour of various REOs such as La 2 O 3 , CeO 2 , Gd 2 O 3 , Dy 2 O 3 , Y 2 O 3 , Tm 2 O 3 , and Sm 2 O 3 for improving the limitations of GeO 2 /Ge interface 18‐27 . It has been reported that deposition of REOs as high‐ k on the GeO 2 /Ge shows better potential in improving both thermal and electrical properties than those of transitional metal oxides such as HfO 2 and Al 2 O 3 26,28,29 .…”

Section: Introductionmentioning

confidence: 99%

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Formation and characterization of holmium oxide on germanium‐based metal‐oxide‐semiconductor capacitor

Onik

Hawari

Sabri

et al. 2021

Intl J of Energy Research

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The influence of different thermal oxidation/nitridation durations (5,10,15, and 20 minutes) at 400 C for transforming metallic Ho sputtered on Ge substrate in N 2 O gas ambient have been systemically investigated to develop Ho 2 O 3 /Ge based on metal-oxide-semiconductor (MOS) device. The structural and chemical properties of the film were characterized using X-ray diffraction spectroscopy, X-ray photoelectron spectroscopy (XPS), and high-resolution transmission electron microscopy. Cubic-Ho 2 O 3 dielectric layer has been formed along with sandwiched interfacial layer (IL) between substrate Ge and high-k interface comprising tetragonal-GeO 2 , GeO x , and cubic-Ge 3 N 4 compounds. Energy band alignment for Ho 2 O 3 /IL/Ge MOS stack has been determined from XPS spectrum where 10-minute sample exhibited maximum conduction band offset, ΔE c~2 .47 eV and valance band offset, ΔE v~4 .67 eV, inducing lower leakage current density, J~10 −5 A cm −2 at the higher electrical breakdown, E BD~8 .59 MV cm −1 . The electrical results of this sample also rev-

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Formation and characterization of holmium oxide on germanium‐based metal‐oxide‐semiconductor capacitor

Onik

Hawari

Sabri

et al. 2021

Intl J of Energy Research

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“…Previous reports explained a decrease in leakage current when the insulating YGeO x was formed at the interface. [ 19 ] However, as shown in the HRTEM images in Figure 2, the thickness of the YGeO x layer after electrode deposition was very thin (≈0.8 nm for IOF, and ≈0.3 nm for OPA). Meanwhile, the thickness of the Y 2 O 3 layer in the IOF and OPA decreased by 0.6 and 0.4 nm, respectively, compared to the NOT.…”

Section: Resultsmentioning

confidence: 99%

“…However, due to the excessive formation of GeO 2 interfacial layer having a low dielectric constant, it was inevitable to obtain a very high capacitance equivalent oxide thickness (CET) of 9.9 nm. [ 19 ]…”

Section: Introductionmentioning

confidence: 99%

Trap Reduction through O₃ Post‐Deposition Treatment of Y₂O₃ Thin Films Grown by Atomic Layer Deposition on Ge Substrates

Kim

Kwon

Lim

et al. 2021

Adv Elect Materials

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For Ge‐based metal‐oxide‐semiconductor field‐effect transistor application, high‐k Y2O3 thin films are deposited on Ge single‐crystal substrate using atomic layer deposition. The primary drawbacks of a metal‐oxide‐semiconductor capacitor with pristine Y2O3 are large hysteresis and high leakage current. Through forming gas annealing (FGA), the leakage current can be reduced by approximately three orders of magnitude, along with the reduction of interface trap density. However, there is still a large hysteresis in the capacitance–voltage curves. O3 post‐deposition annealing (OPA) is used to solve the problem. The formation of the YGeOx interfacial layer through OPA and the reduction of the defect level of the Y2O3 thin film effectively decrease the hysteresis, which also decreases the leakage current. Additionally, the hysteresis is 690 mV when only FGA is performed. However, it is further reduced to 260 mV through OPA. Moreover, the remote oxygen scavenging effect using TiN/Pt electrodes prevents an unintentional increase in equivalent oxide thickness (EOT). The 4.7 nm thick Y2O3 film results in an EOT of 1.77 nm and leakage current density of 2.1 × 10−7 A cm−2 (at flat band voltage—1 V) after the OPA.

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“…Therefore, in order to achieve high-speed and low-power Ge-based MOSFETs, it is very important to achieve a high-quality high- k /Ge interface. Fortunately, a lot of methods have been reported to improve the quality of high-k/Ge interface [ 8 ], such as the introduction of SiO 2 [ 9 ], Si [ 10 ], GeO 2 [ 11 ], Al 2 O 3 [ 12 , 13 ], GeO x N y [ 14 , 15 ], and rare earth oxides [ 16 , 17 ] as the interfacial control layer between Ge substrate and high- k gate dielectrics. In particular, the GeO 2 /Ge structure has superior interface properties, an extremely low interface state density (D it ) of less than 1 × 10 11 cm −2 eV −1 can be achieved [ 18 ].…”

Section: Introductionmentioning

confidence: 99%

Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition

Cao

et al. 2017

Nanoscale Res Lett

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In situ-formed SiO2 was introduced into HfO2 gate dielectrics on Ge substrate as interlayer by plasma-enhanced atomic layer deposition (PEALD). The interfacial, electrical, and band alignment characteristics of the HfO2/SiO2 high-k gate dielectric stacks on Ge have been well investigated. It has been demonstrated that Si-O-Ge interlayer is formed on Ge surface during the in situ PEALD SiO2 deposition process. This interlayer shows fantastic thermal stability during annealing without obvious Hf-silicates formation. In addition, it can also suppress the GeO2 degradation. The electrical measurements show that capacitance equivalent thickness of 1.53 nm and a leakage current density of 2.1 × 10−3 A/cm2 at gate bias of Vfb + 1 V was obtained for the annealed sample. The conduction (valence) band offsets at the HfO2/SiO2/Ge interface with and without PDA are found to be 2.24 (2.69) and 2.48 (2.45) eV, respectively. These results indicate that in situ PEALD SiO2 may be a promising interfacial control layer for the realization of high-quality Ge-based transistor devices. Moreover, it can be demonstrated that PEALD is a much more powerful technology for ultrathin interfacial control layer deposition than MOCVD.

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Improving the ALD-grown Y 2 O 3 /Ge interface quality by surface and annealing treatments

Cited by 14 publications

References 29 publications

Formation and characterization of holmium oxide on germanium‐based metal‐oxide‐semiconductor capacitor

Formation and characterization of holmium oxide on germanium‐based metal‐oxide‐semiconductor capacitor

Trap Reduction through O₃ Post‐Deposition Treatment of Y₂O₃ Thin Films Grown by Atomic Layer Deposition on Ge Substrates

Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition

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Improving the ALD-grown Y 2 O 3 /Ge interface quality by surface and annealing treatments

Cited by 14 publications

References 29 publications

Formation and characterization of holmium oxide on germanium‐based metal‐oxide‐semiconductor capacitor

Formation and characterization of holmium oxide on germanium‐based metal‐oxide‐semiconductor capacitor

Trap Reduction through O3 Post‐Deposition Treatment of Y2O3 Thin Films Grown by Atomic Layer Deposition on Ge Substrates

Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition

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Trap Reduction through O₃ Post‐Deposition Treatment of Y₂O₃ Thin Films Grown by Atomic Layer Deposition on Ge Substrates