2012
DOI: 10.1016/j.microrel.2011.10.009
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Improving the electrical characteristics of MOS transistors with CeO2/La2O3 stacked gate dielectric

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Cited by 19 publications
(6 citation statements)
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“…In addition, a strong Si‐N bonding as well as relaxation of strained bonds between the CeO 2 passivation layer and Si surface could be realized through the utilization of nitrogen ambient that led to a reduction in interface trap density 36 . Similar findings have been revealed for HfO 2 37 as well as stacking CeO 2 /La 2 O 3 38 passivation layer subjected to nitridation, wherein an enhancement in carrier mobility as well as stable threshold voltage were established for the fabricated devices. Besides these beneficial effects of nitrogen ambient, the inbound of nitrogen species during annealing might contribute to the displacement of oxygen from the CeO 2 lattice, and hence encouraging the formation of oxygen vacancies unfavorable for passivation layer 39,40 …”
Section: Introductionsupporting
confidence: 65%
“…In addition, a strong Si‐N bonding as well as relaxation of strained bonds between the CeO 2 passivation layer and Si surface could be realized through the utilization of nitrogen ambient that led to a reduction in interface trap density 36 . Similar findings have been revealed for HfO 2 37 as well as stacking CeO 2 /La 2 O 3 38 passivation layer subjected to nitridation, wherein an enhancement in carrier mobility as well as stable threshold voltage were established for the fabricated devices. Besides these beneficial effects of nitrogen ambient, the inbound of nitrogen species during annealing might contribute to the displacement of oxygen from the CeO 2 lattice, and hence encouraging the formation of oxygen vacancies unfavorable for passivation layer 39,40 …”
Section: Introductionsupporting
confidence: 65%
“…HfAlO offers interesting performance from this perspective with respect to SiO2 or Si3N4, consistently to the band-gap and the high-k value reported, [1][2][3]. Although further materials (such as Ta2O5 or La2O3/CeO2) demonstrate a higher capacitance density [4][5][6][7], HfAlO takes advantage of the low leakage current density for the higher band offset [1][2][3], [8]. This latter is crucial at the high temperature reached in operating condition.…”
Section: Introductionmentioning
confidence: 52%
“…This postprocessing step at comparatively low temperatures of 500 C, which is compatible with a gate-last process, 18 enables the growth of highly ordered, C-type La 2 O 3 (111) films with a low defect concentration, which was shown to result in reduced Coulomb scattering by reducing the fixed oxide charge, reduced leakage currents, and a higher channel mobility, 18,19 suggesting that also the modest interface postoxidation helps in improving the electrical properties of the gate stack. Together with the prepassivation approach, these findings may pave the road toward the realization of rare-earth based, epitaxial, highly crystalline high-k oxides on silicon.…”
Section: Discussionmentioning
confidence: 99%
“…14 Very recently, a strong improvement in electrical properties was observed when a thin cerium oxide was deposited on top, which was explained in a scenario where, driven by the difference in oxygen chemical potential in lanthana and ceria, oxygen vacancies at the interface and in the LaO x film were speculated to be healed by additional oxygen ions provided by the ceria adlayer. [17][18][19] Earlier, we have reported the beneficial use of an atomic layer of chlorine for substrate passivation, enabling the growth of well-ordered Ce 2 O 3 (111) (Refs. 20 and 21) and Pr 2 O 3 (111) (Ref.…”
Section: Introductionmentioning
confidence: 99%