Improving the Gate-Induced Drain Leakage and On-State Current of Fin-Like Thin Film Transistors with a Wide Drain

Hu, Hsin‐Hui; Zeng, Yan-Wei; Chen, Kun-Ming

doi:10.3390/app8081406

Cited by 3 publications

(2 citation statements)

References 42 publications

(43 reference statements)

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“…The growing interest in low-temperature poly-Si TFTs applications in flat panel displays (Kim et al 2019;Phong et al 2019;Hu et al 2018) leads us to investigate the effect of interface states, BBT (Band to band tunneling) model and active layers thickness in the transfer characteristics to evaluate the device performance.…”

Section: Introductionmentioning

confidence: 99%

TCAD Simulation of the Electrical Characteristics of Polycrystalline Silicon Thin Film Transistor

Tayoub¹,

Zebentouta

Benamara³

2020

Pak. j. sci. ind. res. Ser. A: phys. sci.

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Low-temperature polycrystalline silicon thin film transistors (poly-Si TFTs) have been studied because of their high performance in Active Matrix Liquid Crystal Displays (AMLCD's) and Active Matrix Organic Light-Emitting Diode (AMOLED) applications. The purpose of this work is to simulate the impact of varying the electrical and physical parameters (the interface states, active layer's thickness and BBT model) in the transfer characteristics of poly-Si TFT to extract the electrical parameters like the threshold voltage, the mobility and to evaluate the device performance. The device was simulated using ATLAS software from Silvaco, the results show that the electrical and physical parameters of poly-Si TFT affect significantly its transfer characteristics, choosing suitable parameters improve high-performance transistor. Such results make the designed structure a promising element for large-scale electronics applications.

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Section: Introductionmentioning

confidence: 99%

TCAD Simulation of the Electrical Characteristics of Polycrystalline Silicon Thin Film Transistor

Tayoub¹,

Zebentouta

Benamara³

2020

Pak. j. sci. ind. res. Ser. A: phys. sci.

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“…However, this planar-based structure may hinder potential development, considering the operating voltage and the driving current. Therefore, the LTPS with a fin-like structure is developed [29][30][31]. Our previous studies have proposed a LTPS-based non-volatile memory (NVM) device [32,33].…”

mentioning

confidence: 99%

Investigating DC and AC degradation behaviors to P-type low temperature polycrystalline silicon thin film transistor with fin-like structure

Chen¹,

Zheng

Yeh

et al. 2023

J. Phys. D: Appl. Phys.

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Currently, thin film transistor (TFT) based on planar structure is widely used in the applications of display panels. However, when the device is scaling-down, new device structures or novel materials should be introduced. In this work, the low temperature polycrystalline silicon (LTPS) TFT with fin-like structure is investigated. On the basis of electrical measurements, the device features good switching characteristics with low operating voltages. However, the Id-Vg sweeping result exhibits off-state leakage, which is known as the gate-induced drain leakage (GIDL) current. The GIDL current is increased with the drain bias and the temperature increasing. To observe the GIDL current degradations, different gate biases with negative bias stress (NBS) and positive bias stress (PBS) are applied. The results show different degradation behaviors. In addition, bias stresses with DC and AC methods are also applied to verify the device reliability. Both threshold voltage (Vt) shift and sub-threshold swing (S.S.) are also extracted to verify the degradations of the device. Finally, the physical models are also proposed to illustrate the degradation behaviors of the LTPS device with a fin-like structure, which can be beneficial to future related development of LTPS-based devices.

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Enhancement of DRAM Performance by Adopting Metal–Interlayer–Semiconductor Source/Drain Contact Structure on DRAM Cell

Son

Jung

Kim

et al. 2021

IEEE Trans. Electron Devices

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Improving the Gate-Induced Drain Leakage and On-State Current of Fin-Like Thin Film Transistors with a Wide Drain

Cited by 3 publications

References 42 publications

TCAD Simulation of the Electrical Characteristics of Polycrystalline Silicon Thin Film Transistor

TCAD Simulation of the Electrical Characteristics of Polycrystalline Silicon Thin Film Transistor

Investigating DC and AC degradation behaviors to P-type low temperature polycrystalline silicon thin film transistor with fin-like structure

Enhancement of DRAM Performance by Adopting Metal–Interlayer–Semiconductor Source/Drain Contact Structure on DRAM Cell

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