2013
DOI: 10.1063/1.4839275
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Improving the performance of organic thin film transistors formed on a vacuum flash-evaporated acrylate insulator

Abstract: Articles you may be interested inThe importance of spinning speed in fabrication of spin-coated organic thin film transistors: Film morphology and field effect mobility Appl. Phys. Lett.

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Cited by 18 publications
(22 citation statements)
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“…It is known that absorbed atmospheric moisture can be a source of hole traps which is reflected in transfer curves as a more negative turn-on voltage and eventually lower mobility [25]. The un-buffered transistor in this work showed carrier mobility of ~0.05 cm 2 /Vs, on/off ratio of 10 4 and turn-on voltage close to 0 V. The low mobility was likely due to the undesirable surface energy which is prone to yielding poor crystallinity at the very near surface in deposited films of small molecule semiconductors as discussed in our recent paper [23].…”
Section: Resultsmentioning
confidence: 86%
See 1 more Smart Citation
“…It is known that absorbed atmospheric moisture can be a source of hole traps which is reflected in transfer curves as a more negative turn-on voltage and eventually lower mobility [25]. The un-buffered transistor in this work showed carrier mobility of ~0.05 cm 2 /Vs, on/off ratio of 10 4 and turn-on voltage close to 0 V. The low mobility was likely due to the undesirable surface energy which is prone to yielding poor crystallinity at the very near surface in deposited films of small molecule semiconductors as discussed in our recent paper [23].…”
Section: Resultsmentioning
confidence: 86%
“…thin aluminium oxide films treated with a self-assembled monolayer of phosphonic acid [22]. In our case, it was found to be beneficial to buffer the polar TPGDA dielectric with a thin, spin-coated film of polystyrene to produce a low polarity surface [23]. As an alternative to spin-coated polystyrene and in keeping with the aim of developing an all-vacuum, R2R-compatible process, we also report here the vacuum-flash evaporation and curing of a thin film of lauryl acrylate as a buffer layer on TPGDA.…”
Section: Introductionmentioning
confidence: 99%
“…This suggests that the lower surface energy of the OTS‐treated substrate than that of DNTT could induce favorable nucleation of the DNTT crystals on the substrate, inducing DNTT layer formation under the PS layer. In contrast, the larger surface energy of the UV/O 3 ‐treated substrate inhibits the nucleation of DNTT, and alternatively, the PS layer with a relatively larger surface energy (47.5 mN m −1 ) was favorably formed on the substrate on which the nucleation and deposition of DNTT occurred. The effect of the isomer ratio of the precursor to the deposition position is not clear.…”
mentioning
confidence: 99%
“…To provide structure and a nonconductive layer, a tri(propylene glycol) diacrylated (TPGDA) material was developed as described in the Methods section of the Supporting Information. TPGDA has been used in previous studies to produce organic thin‐film transistors through a vacuum flash‐evaporation process and cured by electron beam. As TPGDA contains photosensitive acrylate groups, the curing reaction can also be initiated under UV light with the presence of proper photoinitiators through the free‐radical photopolymerization…”
Section: Development and Uv Curing Of A Dielectric Inkmentioning
confidence: 99%