A soluble precursor of dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) is developed for high-performance printed organic thin-film transistors (OTFTs). The DNTT precursor enables excellent thin-film formation and can induce specific phase separations when blended with inert polymers. The DNTT OTFTs processed from the precursor/polymer blend exhibit field-effect mobilities of up to 1.1 cm(2) V(-1) s(-1) and excellent durability against air exposure and thermal stress.

High-mobility short-channel organic thin-film transistors fabricated using a dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]-thio--phene (DNTT) precursor (5,14-N--phenylmaleimide DNTT, endo-isomer-rich fraction) and polystyrene (PS) blends are reported. The DNTT grains are "single-crystal"-like and the field-effect mobility of the devices ranges up to 4.7 cm(2) V(-1) s(-1). The PS layer functions as a hydrophobic passivation layer on the Si/SiO2 substrate.

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High-performance organic field-effect transistor (OFET) memories were developed by a simple solution process using phosphorus-doped silicon nanoparticles (Si NPs) and dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) precursor–polystyrene (PS) blends. Si NPs were doped with phosphorus to control the ionization potential and functioned as a nano-floating gate. DNTT precursor–PS blends were converted to DNTT/PS layers on a Si NP layer by thermal annealing. The OFET memories clearly exhibited a memory window of 20 V and a notably large threshold voltage (Vth) shift of 40 V after the application of negative and positive voltages to the gate electrode.

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