1979
DOI: 10.1016/0375-9601(79)90687-x
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Impurity diffusion of 113Sn and 124Sb in copper

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Cited by 14 publications
(7 citation statements)
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“…Moreover, a high concentration of the alloying element was manifest at the inner void surface and in the neighborhood of voids grown to considerable size. It was confirmed experimentally that under exactly the same conditions [27,28] the formation of voids was absent in diffusion experiments. Furthermore, no void formation is found in electromigration experiments using high-purity crystalline matrix materials.…”
Section: Experimental Datasupporting
confidence: 69%
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“…Moreover, a high concentration of the alloying element was manifest at the inner void surface and in the neighborhood of voids grown to considerable size. It was confirmed experimentally that under exactly the same conditions [27,28] the formation of voids was absent in diffusion experiments. Furthermore, no void formation is found in electromigration experiments using high-purity crystalline matrix materials.…”
Section: Experimental Datasupporting
confidence: 69%
“…Thus, enrichment is to be expected for Al(Zn), Al(Mn) and Cu(Mn), and depletion for Cu(Ag), Ag(Cu), Cu(Zn) and Cu(In), as was actually observed. We point out here, that in electromigration experiments an enrichment of In-atoms around and at inner void surfaces in a single-crystal Cu-matrix was present [27], while Anthony [33] quotes a depletion of In around surface pits, in complete accord with the different action of vacancy-impurity pairs in both types of experiments. Obviously, the binding strength between a lattice-site vacancy and the solute atom plays an important role in this model, and it implies the geometrical structure in detail [46].…”
Section: Discussionmentioning
confidence: 70%
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