This paper presents a study on plasma enhanced atomic layer deposition (ALD) of TiO2 and WO3 films on silicon substrates. At low temperatures, ALD processes, which are not feasible at high temperatures, could be possible. For example, temperatures at 180 °C and above allow no WO3 ALD process with WF6 as a precursor because etching processes hinder film growth. Further low temperature deposition techniques are needed to coat temperature sensitive materials. For the deposition, WF6 and TiCl4 are used as metal precursors and O2 and H2O as oxygen sources. The depositions were accomplished in the temperature range of 30 °C up to 180 °C for both metal oxides. Spectroscopic ellipsometry, x-ray reflection, and grazing incidence diffraction were used to investigate the deposited ALD thin films. Film growth, density, crystallinity, and roughness are discussed as functions of temperature after ensuring the ALD requirement of self-saturating adsorption. Growth rates and measured material properties are in good agreement with literature data.

Using the tracer-standard sectioning technique the impurity diffusion of indium in copper has been investigated in the temperature range from 798.1 to 1081.0 "C.

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Electroniigratioii of lI3Sn in Cu was investigated by the isothermal method in the temperature range from 918 t o 1042 "C using the thin layer boundary condition. Following GILDER and LAZARUS the welding interface was marked by help of a 181Hf-layer. The pseudo activation energy. which is (1.87 0.29) eV, agrees within the experimental errors with the activation energy of impurity diffusion. Because of the fluctuation of the individual values a significant temperature dependence of the apparent effective charge could not been observed. The average value of the apparent effective charge z& = -33 2. The residual resistance due to electron scattering a t the jumping atoms yields for the models of

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