Impurity diffusion of <sup>114</sup>In in Cu

Krautheim, G.; Neidhardt, A.; Reinhold, U.

doi:10.1002/crat.19780131110

Cited by 17 publications

(7 citation statements)

References 11 publications

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“…The subscript Culn 2 , indicating the stoichiometry of this phase, will be justified later. No fraction for in In in Cu with Vzz = 0 caused by the cubic crystal structure is detected, which excludes In diffusion in Cu in our annealing temperature range, as expected from known diffusion data 5. Figure 2summarizes the isochronal annealing experiments, showing the dependence of the fraction /cuin 2 (left scale) for the new phase as a function of annealing temperature.…”

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confidence: 57%

Compound Formation at Cu-In Thin-Film Interfaces Detected by Perturbedγ−γAngular Correlations

et al. 1985

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Interface compound formation at Cu-In films is studied with the perturbed y-y angular correlation method using radioactive lll In probe atoms. The growth of a Culn 2 intermetallic interface phase is observed with a sensitivity on the scale of atomic distances in the temperature range between 220 and 340 K. This new phase is characterized by an electric field gradient (at 7 = 77 K) with ^ = 4.50(5) xlO 17 V/cm 2 and TJ = 0.57(1). The activation energy of phase formation for Culn 2 was determined to be 0.42(2) eV.PACS numbers: 71.70.Jp, 73.40.Jn, 76.80.+ y The interfaces between difficult solids have attracted great interest recently, since they are of considerable fundamental and practical importance. One of the basic questions is the formation of compounds in the interface region and, connected to that, the dynamics governing the growth as well as thermal stability of such interface phases. Interface compounds are of great practical importance for the electrical and mechanical properties of thin-film systems, as for instance for Schottky barriers in metal-semiconductor contacts. For the detection of interface compounds and interfacial reactions, powerful experimental tools have been developed, all of them possessing their specific sensitivity. Interfaces within a few atomic distances of the surface can be studied extensively with electron-diffraction, Auger-electron, and photoelectron spectroscopy. Interfaces deeper inside the films can be investigated by x-ray diffraction and Rutherford backscattering, although these techniques have difficulties in resolving cases where the interfacial reaction volume is small compared to the sample volume.In this paper we want to present the first application of the perturbed y-y angular correlation (PAC) method, which is based on the hyperfine interaction of radioactive probe nuclei with electric field gradients. The PAC technique exhibits a high microscopic sensitivity to changes of local structure within few atomic distances. 1 Therefore, this method offers the possibility of detailed studies of interface compound formation, as will be demonstrated for Cu-In film couples.Film samples are produced by evaporating indium onto a glass backing at T = 106 K. After annealing of this In film at 260 K, copper was evaporated onto the In film at 106 K. Two different ways of deposition of the radioactive lll In probe atoms were applied. In one case the m In probe atoms were evaporated simultaneously with the natural In material yielding homogeneously doped In films. In order to increase the sensitivity to interface compound formation, m In probe atoms were also deposited in a very low concentration (typically 10 11 atoms/cm 2 ) onto the surface of the In film before coverage with copper. Sample preparation was carried out in an UHV chamber (p < 10 ~9 mbar) providing the possibility of moving the sample from the evaporation region into a measurement position between the y counters for the detection of PAC spectra. This position is shielded against the high background radiation from th...

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confidence: 57%

Compound Formation at Cu-In Thin-Film Interfaces Detected by Perturbedγ−γAngular Correlations

et al. 1985

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“…In comparison of the bulk diffusion parameters ( D 0 and Q ) of In segregation obtained from this study and those obtained from literature for In impurity diffusion in Cu crystals investigated using the tracer method, Table was completed and the Arrhenius graphs were plotted for In diffusion in Cu crystals (see Figure ). The Arrhenius lines in Figure are very close, which shows a good comparison between the bulk diffusion parameters of In segregation obtained in this study and those found in literature.…”

Section: Resultsmentioning

confidence: 99%

“…Similar to the attractive interaction between the In and Cu atoms, a strong attractive interaction between the S and Cu atoms (Ω CuÀS = 23.0 kJ.mol À1 ) set a preference for unlike first-neighbour bonds formation between the S and Cu atoms and propose that an S atom occupies the Cu surface substitutionally and prefers to bond with Cu atoms. In comparison of the bulk diffusion parameters (D 0 and Q) of In segregation obtained from this study and those obtained from literature for In impurity diffusion in Cu crystals investigated using the tracer method, [9][10][11] Table 2 was completed and the Arrhenius graphs were plotted for In diffusion in Cu crystals (see Figure 6). The Arrhenius lines in Figure 6 are very close, which shows a good comparison between the bulk diffusion parameters of In segregation obtained in this study and those found in literature.…”

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…The segregation behaviour of In in Cu crystals is thus lacking in literature. Nevertheless, In impurity diffusion in Cu crystals was investigated using the tracer method by Krautheim et al, [9] Gorbachev et al [10] and W. Gust et al [11] in the temperature range of 602-1354 K to report the diffusion parameters, namely, the pre-exponential factor (D 0 ) and the activation energy (Q).…”

Section: Introductionmentioning

confidence: 99%

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Surface segregation measurements of In and S impurities from a dilute Cu(In,S) ternary alloy

Swart

Terblans

2013

Surface & Interface Analysis

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The surface segregation of In and S from a dilute Cu(In,S) ternary alloy were measured using Auger electron spectroscopy coupled with a linear programmed heater. The alloy was linearly heated and cooled at constant rates. Segregation data of a linear heat run showed surface segregation of In that reached a maximum surface coverage of 25% followed by S, which reached a coverage of 30%. It was found that after In had reached a maximum surface coverage, it started to desegregate as soon as the S enriched the surface until In was completely replaced by S. The segregation parameters, namely, the pre‐exponential factor (D0), activation energy (Q), segregation energy (ΔG˚) and interaction energy (Ω) were extracted from the measured segregation data for both In and S segregation in Cu by simulating the measured segregation data with a theoretical segregation model (modified Darken model). The segregation parameters obtained for In segregation in Cu are D0 = 1.8 ± 0.5 × 10−5 m2 s−1, Q = 184.3 ± 1.0 kJ.mol−1, ΔG˚ = −61.4 ± 1.4 kJ.mol‐1, ΩCu−In = 3.0 ± 0.4 kJ.mol−1; for S segregation in Cu the parameters are D0 = 8.9 ± 0.5 × 10−3 m2 s−1, Q = 212.8 ± 3.0 kJ.mol−1, ΔG˚ = −120.0 ± 3.5 kJ.mol−1, ΩCu−S = 23.0 ± 2.0 kJ mol−1 and the In and S interaction parameter is ΩIn−S = −4.0 ± 0.5 kJ.mol−1. The initial parameters used for the Darken calculations were extracted from fits performed with the Fick's and Guttmann model. Copyright © 2013 John Wiley & Sons, Ltd.

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Non‐Arrthenius Behaviour and Divacancy Contribution in Self‐Diffusion of ⁶⁴Cu in Cu

Krautheim

Neidhardt

Reinhold

et al. 1979

Cryst Res and Technol

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The self-diffusion of W u in Cu was investigated in the high temperature range (1078 t o 1348 K), upplying the tracer-standard sectioning technique. For the frecluency factor Do and the activation energy Q, we found Do = (0.68 f_ 0 0 : : ; ) ctnZ s-I untl (5, = (2.17 f f 0.02) t:V. A slight bending of the Arrheniiis plot suggests u divacanry contribution to the self-diffusion of copper. Data sets used in an nriiiieriral analysis are in good accord with published results. Mit Hilfe des Tracer-Standardscliic.htenteiluiigsverfuhrcns wurtle clit. Selbsttliffusion von 64Cu in Cii iiii Hoc1iteniperaturbt.rc.ic.h (1078 ... 1348 K ) unterswht. Unter Verwendung clcr ,,Stu~itlurd-Ititerpretution" wurtlen fur den Frequenzfaktor Do und fur (lie Aktivierungstsnergie Qo (lie folgenden Werte ertiiittelt: Do = (0,M ~;~~) c i~~% -~; Qo = (2,17 f f 0.02) t:V. Wegen tler leichten Kriinimung der Arrhenius-Dars tc-llung wurcle eine Analyse van DoI)I'elleerstrllenbeitriigen angeschlossen. Dubei zeigtc sich, CIUR bei tler Selbstdiffusion von Kupfer neben Einfachaiich Dop~~elleerstellen~~iechltriixtnrn wirksuiii werden. Die beschreibentfen Datensiitze befinden sich in guter f'bereinstiiniiiung iiiit Literuturwerten.

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Impurity diffusion of ¹¹⁴In in Cu

Abstract: Using the tracer-standard sectioning technique the impurity diffusion of indium in copper has been investigated in the temperature range from 798.1 to 1081.0 "C.

Cited by 17 publications

References 11 publications

Compound Formation at Cu-In Thin-Film Interfaces Detected by Perturbedγ−γAngular Correlations

Compound Formation at Cu-In Thin-Film Interfaces Detected by Perturbedγ−γAngular Correlations

Surface segregation measurements of In and S impurities from a dilute Cu(In,S) ternary alloy

Non‐Arrthenius Behaviour and Divacancy Contribution in Self‐Diffusion of ⁶⁴Cu in Cu

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Impurity diffusion of 114In in Cu

Abstract: Using the tracer-standard sectioning technique the impurity diffusion of indium in copper has been investigated in the temperature range from 798.1 to 1081.0 "C.

Cited by 17 publications

References 11 publications

Compound Formation at Cu-In Thin-Film Interfaces Detected by Perturbedγ−γAngular Correlations

Compound Formation at Cu-In Thin-Film Interfaces Detected by Perturbedγ−γAngular Correlations

Surface segregation measurements of In and S impurities from a dilute Cu(In,S) ternary alloy

Non‐Arrthenius Behaviour and Divacancy Contribution in Self‐Diffusion of 64Cu in Cu

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Impurity diffusion of ¹¹⁴In in Cu

Non‐Arrthenius Behaviour and Divacancy Contribution in Self‐Diffusion of ⁶⁴Cu in Cu