Impurity states in a spherical GaAs–Ga<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si2.gif" overflow="scroll"><mml:msub><mml:mrow/><mml:mrow><mml:mn>1</mml:mn><mml:mo>-</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:math> Al<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si3.gif" overflow="scroll"><mml:msub><mml:mrow/><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:math>As quantum dots: Effects of hydrostatic pressure

Pérez-Merchancano, S. T.; Franco, R.; Silva–Valencia, J.

doi:10.1016/j.mejo.2007.07.012

Cited by 56 publications

(8 citation statements)

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“…For donor and acceptor impurities in any quantum heterostructure it was found that the donor binding energy increases with increasing pressure and decreasing size of the heterostructure [13][14][15]. The effects of hydrostatic pressure on the optical transitions in self-assembled InAs/GaAs quantum dots were studied by Duque et al [16].…”

Section: Introductionmentioning

confidence: 99%

Binding energy of heavy excitons in spherical quantum dots under hydrostatic pressure

Moscoso-Moreno

Franco

Silva–Valencia

2009

Physica Status Solidi (b)

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The binding energy of heavy hole excitons in a spherical GaAs–Ga1–x Alx As quantum dot under isotropic hydrostatic pressure was calculated using the Hylleraas coordinate system and a variational approach within the approximation of the effective mass. The influences of hydrostatic pressure on the effective masses of the electron and the heavy hole, the dielectric constant and the conduction‐ and valence‐band offsets between the well and the barriers are taken into account in the calculation. The binding energy is computed as a function of hydrostatic pressure, the dot sizes and the Al(x) concentration. The results show that the binding energy derived from exciton increases with the pressure, especially for small quantum dots. Also, we have found that the binding energy increases with the pressure and the concentration for a fixed quantum dot radius, which can be useful for technological applications. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Introductionmentioning

confidence: 99%

Binding energy of heavy excitons in spherical quantum dots under hydrostatic pressure

Moscoso-Moreno

Franco

Silva–Valencia

2009

Physica Status Solidi (b)

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“…Numerous previous studies have used approximate methods to study the electronic, thermal and optical properties of a quantum dot in the presence of a uniform magnetic field, an electric field or an impurity under the influence of hydrostatic pressure based on the effective mass approximation [12][13][14][15][16][17][18][19][20]. The energy levels of a single GaAs QD with an infinite confinement potential well were studied using the second quantization method [21].…”

Section: Introductionmentioning

confidence: 99%

The Analytical Effects of a Hydrostatic Pressure on the Ground State Energy of GaAs Quantum Dot at Low-Temperature: Algebraic Method

Nammas

Hasan

2022

Semiconductors

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This analytical study focused on discussing the collective effects of hydrostatic pressure and temperature on the ground state energy for two electrons trapped in GaAs parabolic quantum dot in the presence of a magnetic field using the effective mass approximation. The electronic interaction was approximated by the Johnson--Payne potential model, where its parameters were carefully chosen to match the Coulomb interaction. It is noted that the ground state energy decreases with an increment in pressure while it increases linearly slightly with increasing temperature. As is customary, it was found that ground state energy decreases with increasing dot size and reach its bulk value as the dot becomes wider. Among the most prominent notes related to this study were as follows: (i) The largest contribution to the total ground state energy is caused by the relative motion since the effect of pressure on this part is more pronounced than the part of the center of mass that often does not feel the presence of pressure. (ii) Ground state energy shows temperature insensitivity while pressure exerts a tangible effect on the ground state energy in the strong magnetic field confinement. (iii) The effect of temperature on the ground state energy is always the opposite of the pressure effect. (iv) With regard to the increase in pressure, it was found that it reduces the electron separation (r), therefore the ground state energy decreases in the presence of the harmonic interaction that is directly proportional to the square of r, but compared to previous works mentioned in the literature, energy showed increased behavior because Coulomb's interaction is inversely proportional to the electron separation. (v) In the region of weak confinement (R>a_B*), the effect of pressure on ground state energy becomes neglected, while this effect becomes noticeable in the region of strong confinement (R<a_B*). Keywords: Quantum Dots, Hydrostatic Pressure, Harmonic e-e Interaction.

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“…Previous work has been done on the effects of hydrostatic pressure on the energy behavior of quantum dots with multiple electrons, with the use of different geometries [8][9][10][11][12][13][14][15][16][17][18][19]. Photoluminescence measurement under high hydrostatic pressure has proven to be a useful tool for exploring the electronic structure and optical transitions in quantum dots [20,21].…”

Section: Introductionmentioning

confidence: 99%

Energy Levels in a Single-Electron Quantum Dot with Hydrostatic Pressure

et al. 2018

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Impurity states in a spherical GaAs–Ga1-x AlxAs quantum dots: Effects of hydrostatic pressure

Cited by 56 publications

References 13 publications

Binding energy of heavy excitons in spherical quantum dots under hydrostatic pressure

Binding energy of heavy excitons in spherical quantum dots under hydrostatic pressure

The Analytical Effects of a Hydrostatic Pressure on the Ground State Energy of GaAs Quantum Dot at Low-Temperature: Algebraic Method

Energy Levels in a Single-Electron Quantum Dot with Hydrostatic Pressure

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