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           nanowires as chemical sensors

Li, Chao; Zhang, Daihua; Liu, Xiaolei; Han, Song; Tang, Tao; Han, Jie; Zhou, Chongwu

doi:10.1063/1.1559438

Cited by 494 publications

(282 citation statements)

References 14 publications

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“…The relationship between absorption coefficient (α) and incident photo energy (hυ) can be written as α = A (hυ -Eg) 1/2 / hυ for allowable direct transitions, where α, Eg, and A are the absorption coefficient, band gap, and constant, respectively. 22 By extrapolating the linear region in the plots of (αhυ) 2 versus hυ (Fig. 3), the band gap value of pure Ga 2 O 3 is 4.62 eV, whereas the value of the zigzag GaN/Ga 2 O 3 heterogeneous NWs is 3.96 eV.…”

Section: Resultsmentioning

confidence: 99%

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Zigzag GaN/Ga2O3 heterogeneous nanowires: Synthesis, optical and gas sensing properties

Chang

Yeh

et al. 2011

AIP Advances

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Zigzag GaN/Ga2O3 heterogeneous nanowires (NWs) were fabricated, and the optical properties and NO gas sensing ability of the NWs were investigated. We find that NWs are most effective at 850 °C at a switching process once every 10 min (on/off = 10 min per each) with a mixture flow of NH3 and Ar. The red shift of the optical bandgap (0.66 eV) is observed from the UV-vis spectrum as the GaN phase forms. The gas sensing characteristics of the developed sensor are significantly replaced to those of other types of NO sensors reported in literature

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Section: Resultsmentioning

confidence: 99%

“…[1][2][3][4][5] Recently, interest in 1D helical and zigzag nanostructures has been steadily increasing given their attractive morphology and property. 6-8, 24, 25 Zigzag nanowires (NWs) and nanoribbons can be used as highly electronic and optoelectronic devices.…”

Section: Introductionmentioning

confidence: 99%

Zigzag GaN/Ga2O3 heterogeneous nanowires: Synthesis, optical and gas sensing properties

Chang

Yeh

et al. 2011

AIP Advances

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“…This has resulted in significant research towards nanowires as electronic gas sensors, e.g., ZnO and In 2 O 3 nanowires have been used for sensing O 2 , NO 2 , and NH 3 [15,16]. The surface states in InAs pin the surface Fermi energy at the conduction band leading to a two-dimensional electron gas immediately beneath the nanowire surface.…”

Section: Introductionmentioning

confidence: 99%

The influence of atmosphere on the performance of pure-phase WZ and ZB InAs nanowire transistors

et al. 2017

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Abstract. We compare the characteristics of phase-pure MOCVD grown ZB and WZ InAs nanowire transistors in several atmospheres: air, dry pure N 2 and O 2 , and N 2 bubbled through liquid H 2 O and alcohols to identify whether phase-related structural/surface differences affect their response. Both WZ and ZB give poor gate characteristics in dry state. Adsorption of polar species reduces off-current by 2 − 3 orders of magnitude, increases on-off ratio and significantly reduces sub-threshold slope. The key difference is the greater sensitivity of WZ to low adsorbate level. We attribute this to facet structure and its influence on the separation between conduction electrons and surface adsorption sites. We highlight the important role adsorbed species play in nanowire device characterisation. WZ is commonly thought superior to ZB in InAs nanowire transistors. We show this is an artefact of the moderate humidity found in ambient laboratory conditions: WZ and ZB perform equally poorly in the dry gas limit yet equally well in the wet gas limit. We also highlight the vital role density-lowering disorder has in improving gate characteristics, be it stacking faults in mixed-phase WZ or surface adsorbates in pure-phase nanowires.

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“…4 More recently, research has been conducted on indium oxide nanostructures, predominantly nanowires, for potential applications in highsensitivity sensor, optoelectronic, field-emission, electronic, and memory devices. [5][6][7] Various synthesis approaches have been demonstrated, which include vapor transport 8 and laser ablation 9 on a variety of substrates. However, common to other nanowire syntheses, growth directionality control (with respect to the substrate) and direct integration (on the same substrate) into functional devices remain as two significant challenges.…”

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confidence: 99%

Direct Integration of Metal Oxide Nanowire in Vertical Field-Effect Transistor

et al. 2004

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We demonstrate seamless direct integration of a semiconductor nanowire grown using a bottom-up approach to obtain a vertical field-effect transistor (VFET). We first synthesize single crystalline semiconductor indium oxide (In 2 O 3 ) nanowires projecting vertically and uniformly on a nonconducting optical sapphire substrate. Direct electrical contact to the nanowires is uniquely provided by a self-assembled underlying In 2 O 3 buffer layer formed in-situ during the nanowire growth. A controlled time-resolved growth study reveals dynamic simultaneous nucleation and epitaxial growth events, driven by two competitive growth mechanisms. Based on the nanowire-integrated platform, a depletion mode n-channel VFET with an In 2 O 3 nanowire constituting the active channel is fabricated. Our unique vertical device architecture could potentially lead to tera-level ultrahigh-density nanoscale electronic, and optoelectronic devices.Bottom-up nanofabrication approaches involving direct interfacing and integration of low-dimensional nanostructures, in particular vertically aligned one-dimensional (1D) nanowires, could potentially provide an attractive solution to attain ultrahigh-density advanced nanoscale devices and 3D nanocircuitries. 1 To realize and maximize the true potential of these nanostructures for advanced applications in nanoelectronics and optoelectronics, reproducible synthesis of 1D nanowires with controlled directionality and morphology is critical. Equally important, a means of providing ideal and direct electrical interface to the nanowires 2 without disrupting their structural integrity would facilitate subsequent nanoscale device integration and realization of good device performance.Indium oxide is a direct wide band gap semiconductor (E g ∼ 3.55-3.75 eV) transparent oxide. 3 It finds several applications ranging from transparent conductive electrodes to electrochromic mirrors and gas sensors. 4 More recently, research has been conducted on indium oxide nanostructures, predominantly nanowires, for potential applications in highsensitivity sensor, optoelectronic, field-emission, electronic, and memory devices. [5][6][7] Various synthesis approaches have been demonstrated, which include vapor transport 8 and laser ablation 9 on a variety of substrates. However, common to other nanowire syntheses, growth directionality control (with respect to the substrate) and direct integration (on the same substrate) into functional devices remain as two significant challenges. To avoid the usual pick-and-place methods of manipulating and aligning horizontally lying nanowires to fabricate prototype testing platforms, 10,11 a proposed solution is to grow single crystalline nanowires epitaxially on a latticematched substrate with the major nanowire growth direction orthogonal to the substrate plane and to use this integrated platform for direct device fabrication. Ideally, the substrate also should be electrically conductive; however, potential substrates that meet both requirements are not readily available. Afte...

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In 2 O 3 nanowires as chemical sensors

Cited by 494 publications

References 14 publications

Zigzag GaN/Ga2O3 heterogeneous nanowires: Synthesis, optical and gas sensing properties

Zigzag GaN/Ga2O3 heterogeneous nanowires: Synthesis, optical and gas sensing properties

The influence of atmosphere on the performance of pure-phase WZ and ZB InAs nanowire transistors

Direct Integration of Metal Oxide Nanowire in Vertical Field-Effect Transistor

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