In‐depth analysis of the static behaviour of a SiC MOSFET and of its associated parameters using both compact modelling and physical simulation

Abstract

In this study, the authors aim at investigating the static electro-thermal behaviour of two new generations of power silicon carbide metal oxide semiconductor field effect transistors (SiC MOSFETs). The studied devices are commercialised and have a vertical structure. Two approaches are followed: device modelling and physical simulation. An improved compact model based on an accurate method of parameters extraction is introduced. The simulation results obtained with this method perfectly fit the measurements. The parameters extracted precisely from the model (threshold voltage, saturation region transconductance and transverse electric field parameter) are used to accurately analyse the static behaviour of 1200 V Gen 2 and 900 V Gen 3 SiC MOSFETs. Physical simulation is conducted to understand the impact of the temperature and the physical parameters on the threshold voltage and the on-state resistance.

Real-Life Mission Profile-Oriented Lifetime Estimation of a SiC Interleaved Bidirectional HV DC/DC Converter for Electric Vehicle Drivetrains

“…Detailed electrothermal modelling techniques for power semiconductor devices can be categorized into five types based on literature: (a) behavioural model [26], [46], [47], (b) physical model [48], [49], (c) semi-physical model (i.e., PSpice or SaberRD/ SaberEXP) [50]- [52], (d) numerical model (i.e., numerical tools such as ISE TCAD and MEDICI) [53], [54] and (e) semi-numerical model [55]. The physical models are represented by the composition of the internal layers of the semiconductors [48], [49]. They are accurate, but precise information about the internal structure of the device is required during modelling.…”