In-Plane Axially Enhanced Photocatalysis by Re<sub>4</sub> Diamond Chains in Layered ReS<sub>2</sub>

Parasuraman, Perumalswamy Sekar; Ho, Jhih-Hao; Lin, Min-Han; Ho, Ching‐Hwa

doi:10.1021/acs.jpcc.8b05946

Cited by 14 publications

(9 citation statements)

References 35 publications

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“…Interestingly, the anisotropic structure of ReX 2 endows them polarization-dependent photocatalytic degradation behavior. [179] The enhanced photocatalytic behavior of the layered ReS 2 with optical polarization along the b-axis demonstrated that the formation of a nano-diamond-chain and a one-layer trigonal crystalline phase is beneficial for the versatile energy applications of ReX 2 . Moreover, strain engineering of ReX 2 can effectively turn the band structure and density of states, [48] which could be considered as a factor to improve the photocatalytic performance.…”

Section: Photocatalytic and Electrocatalyticmentioning

confidence: 98%

2D Re‐Based Transition Metal Chalcogenides: Progress, Challenges, and Opportunities

Chen

Yang

et al. 2020

Advanced Science

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The rise of 2D transition-metal dichalcogenides (TMDs) materials has enormous implications for the scientific community and beyond. Among TMDs, ReX 2 (X = S, Se) has attracted significant interest regarding its unusual 1T′ structure and extraordinary properties in various fields during the past 7 years. For instance, ReX 2 possesses large bandgaps (ReSe 2 : 1.3 eV, ReS 2 : 1.6 eV), distinctive interlayer decoupling, and strong anisotropic properties, which endow more degree of freedom for constructing novel optoelectronic, logic circuit, and sensor devices. Moreover, facile ion intercalation, abundant active sites, together with stable 1T′ structure enable them great perspective to fabricate high-performance catalysts and advanced energy storage devices. In this review, the structural features, fundamental physicochemical properties, as well as all existing applications of Re-based TMDs materials are comprehensively introduced. Especially, the emerging synthesis strategies are critically analyzed and pay particular attention is paid to its growth mechanism with probing the assembly process of domain architectures. Finally, current challenges and future opportunities regarding the controlled preparation methods, property, and application exploration of Re-based TMDs are discussed.

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Section: Photocatalytic and Electrocatalyticmentioning

confidence: 98%

2D Re‐Based Transition Metal Chalcogenides: Progress, Challenges, and Opportunities

Chen

Yang

et al. 2020

Advanced Science

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“…After the invention of graphene, two-dimensional (2D) layered semiconductors, such as MX 2 (M = Mo, W, Re and X = S, Se) and III–VI and IV–VI chalcogenides, have recently received considerable attention for studying their technical applications in structural, catalytic, electronic, and optoelectronic devices − owing to their specific merits of smooth surface, flexible layers, − ultrasmall thickness, larger surface area, high carrier mobility, , and thickness-tunable band gap modulation . Among them, 2D materials having a black phosphorus (BP) structure, including phosphorene, GeX (X = S, Se), and SnX (X = S, Se), are gradually being enthusiastically studied in recent years because of their special structural, optical, and electrical properties.…”

Section: Introductionmentioning

confidence: 99%

Study of Structural, Thermoelectric, and Photoelectric Properties of Layered Tin Monochalcogenides SnX (X = S, Se) for Energy Application

Lin

Chao

et al. 2020

ACS Appl. Energy Mater.

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SnS and SnSe are renowned energy materials that are applied for photoelectric and thermoelectric conversions owing to their suitable band gap, close to 1 eV, and superior figure of merit (ZT), larger than 0.1. In this paper, high-quality layered SnX (X = S, Se) crystals have been successfully grown by the chemical vapor transport (CVT) method. The crystal structure and band structure of SnX are studied, and their photoelectric and thermoelectric properties are characterized. In Raman measurement, four vibration modes with distinct angle-polarization dependence are simultaneously detected by both SnS and SnSe, verifying their similar orthorhombic layered structure with in-plane anisotropy. In-plane anisotropy of band-edge and interband transitions along a and b axes has also been measured experimentally using polarized thermoreflectance (PTR) from 0.7 to 5 eV. The anisotropic band edges of layered SnX (X = S, Se) are well matched and reproduced by first-principles calculation. Hall-effect and thermoelectric measurements revealed that SnX are p-type semiconductors with a high carrier density, larger than 10 17 cm −3 . According to the measurement results of the surface photovoltaic (SPV) response and ZT value, layered SnS can have a superior SPV (8.5 μV/μW) response ∼12× higher than that of SnSe, while SnSe has a ZT of 0.16, ∼4× larger than that of SnS in SnX (X = S, Se). Layered SnSe and SnS could possess great feasibility for application in thermoelectric power generation and solar energy conversion.

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“…[12,31] The advantages of abundant oriented band-edge excitons, distorted 1T′ layered structure, in-plane anisotropy, and high environmental stability make rhenium dichalcogenides much promising for application in optoelectronics, electronics, and energy devices. [32][33][34] To date, light-emitting devices made of excitonic layered ReX 2 (X = S, Se) have only been fabricated by using stacked heterojunction multilayers of two different 2D materials, [35,36] and stacked p-n homojunction diodes are rarely formed due to the lack of p-type material. For practical development of semiconductor technology in ReX 2 , it is necessary to have (to grow) both n-and p-type materials for the formation of fundamental p-n stacked homojunction available for application in future large-area optoelectronic devices.…”

Section: Introductionmentioning

confidence: 99%

Formation of van der Waals Stacked p–n Homojunction Optoelectronic Device of Multilayered ReSe₂ by Cr Doping

Rosyadi

Chan

et al. 2022

Advanced Optical Materials

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of device junctions such as metal oxide semiconductor (MOS) p-and n-channel, tunneling p-or n-junction, and Schottky junction, etc., can be crafted and fabricated separately. In the post-silicon era, newgeneration van der Waals materials such as two-dimensional (2D) semiconductors have received extensive attention and research due to their practical advantages of smooth surface, [1,2] high mobility, [3] ultrathin, [4] flexibility, [5,6] in-plane structural and optical anisotropy, [7][8][9][10] thickness-dependent carrier conduction, [11] thickness tunable bandgap, [12,13] and abundance of direct band-edge excitons. [14,15] Among them, transition metal dichalcogenides (TMDs), including four popular members, MoS 2 , MoSe 2 , WS 2 , and WSe 2 , have been vigorously studied and have potential capabilities in practical semiconductor device applications such as field-effect transistors, [16] bipolar junction transistors, [17,18] phototransistors, [19] and light-emitting diodes (LEDs), [20] etc., due to their high environmental stability and the flexibility on thickness tuning bandgaps. The growth of p-and n-type materials in TMDs layers may be a key issue for the development of various p-n junction devices in 2D semiconductor technology. However, to date, the synthesis of p-type layered TMDs is still challenging, and even some proposals have been made related to Nbdoped p-MoSe 2 , [21] Nb-doped p-MoS 2 , [22] oxygen plasma doped p-MoS 2 , [23] and nitrogen-induced p-WS 2 , [24] etc., the information on the ideal dopants for forming p-type TMDs with controllable carrier concentration and good stability is still insufficient and needs to be further explored. Nowadays, many TMD bipolar p-n junction devices and LEDs typically operate in gate-controlled p-and n-type with a lateral junction, [20,25,26] and a large number of vertically stacked 2D layered devices are still fabricated as heterostructures and heterojunctions [17,18] because of the lack of van der Waals stacked p-n homojunction.Compared to conventional MoS 2 , MoSe 2 , WS 2 , and WSe 2 dichalcogenides, rhenium diselenide (ReSe 2 ) is also an important member of the TMD-family 2D semiconductors, which crystallizes in a specific distorted CdI 2 -type layered structure of triclinic symmetry (space group P1). [27,28] Dissimilar to that the MoS 2 group has a uniform and isotropic layer plane in generally two-layer hexagonal or three-layer rhombohedral form, the structural distortion in the CdI 2 -type (i.e., 1T′) ReSe 2 layer may cause by a specific d 3 nonbonding Re-Re interaction and which The formation of p-or n-type material via impurity doping should be crucial and essentially prior to the establishment of junction devices in semiconductor processing. Especially in a 2D transition-metal dichalcogenide (TMD), dopant selection for growing p-and n-type TMD semiconductors may suffer much higher difficulty and complexity than conventional Si and III-V compounds owing to the complicated valences occurred in transition metals. Different amount of chromium doped in ReSe ...

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In-Plane Axially Enhanced Photocatalysis by Re₄ Diamond Chains in Layered ReS₂

Cited by 14 publications

References 35 publications

2D Re‐Based Transition Metal Chalcogenides: Progress, Challenges, and Opportunities

2D Re‐Based Transition Metal Chalcogenides: Progress, Challenges, and Opportunities

Study of Structural, Thermoelectric, and Photoelectric Properties of Layered Tin Monochalcogenides SnX (X = S, Se) for Energy Application

Formation of van der Waals Stacked p–n Homojunction Optoelectronic Device of Multilayered ReSe₂ by Cr Doping

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In-Plane Axially Enhanced Photocatalysis by Re4 Diamond Chains in Layered ReS2

Cited by 14 publications

References 35 publications

2D Re‐Based Transition Metal Chalcogenides: Progress, Challenges, and Opportunities

2D Re‐Based Transition Metal Chalcogenides: Progress, Challenges, and Opportunities

Study of Structural, Thermoelectric, and Photoelectric Properties of Layered Tin Monochalcogenides SnX (X = S, Se) for Energy Application

Formation of van der Waals Stacked p–n Homojunction Optoelectronic Device of Multilayered ReSe2 by Cr Doping

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In-Plane Axially Enhanced Photocatalysis by Re₄ Diamond Chains in Layered ReS₂

Formation of van der Waals Stacked p–n Homojunction Optoelectronic Device of Multilayered ReSe₂ by Cr Doping