In-plane photovoltaic and photoconductive effects on GaInAs and GaInNAs double quantum well structures

Akçay, Namık; Erol, Ayşe; Arikan, Muzzaffer; Mazzucato, Simone; Chalker, Paul R.; Joyce, Tim

doi:10.1049/ip-opt:20030043

Cited by 4 publications

(2 citation statements)

References 6 publications

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“…We believe that this level is the well-known carbon impurity in the MBE-grown GaAs. Further evidence for this comes from the spectral dependence of in-plane photovoltage [13] and photoconductivity [17] measurements reported by us on the same sample.…”

Section: Resultsmentioning

confidence: 66%

Photo-induced transient spectroscopy of defect levels in GaInNAs

Erol

Mazzucato

Arıkan

et al. 2003

Semicond. Sci. Technol.

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The photo-induced transient spectroscopy (PITS) technique was used to investigate the capture and emission dynamics of deep levels in Ga 0.8 In 0.2 N 0.015 As 0.985 /GaAs and Ga 0.8 In 0.2 As/GaAs quantum wells, sequentially grown by molecular beam epitaxy. A broadband white light or a filtered light was used to identify and discriminate the trapping centres present in the sample. Among all the features discovered in this experiment two PITS peaks, showing activation energies of 160 and 330 meV, have been associated with deep levels in GaInNAs.

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Section: Resultsmentioning

confidence: 66%

Photo-induced transient spectroscopy of defect levels in GaInNAs

Erol

Mazzucato

Arıkan

et al. 2003

Semicond. Sci. Technol.

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“…A dc voltage was applied to the sample with a series resistor and the PC signal was detected using a lock-in amplifier [14]. IPV measurements were carried out by measuring the open circuit voltage using the differential input of a lock-in amplifier [15]. The IPV technique is different from SPV techniques because in the SPV the photovoltage is measured across the layers, while in the IPV two contacts are diffused through all the layers, and the longitudinal open circuit voltage is recorded between the contacts.…”

Section: Methodsmentioning

confidence: 99%

Spectral photoconductivity and in-plane photovoltage studies of as-grown and annealed GaInNAs/GaAs and GaInAs/GaAs quantum well structures

Erol

Akçay

Arıkan

et al. 2004

Semicond. Sci. Technol.

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We present an investigation of thermal annealing effects on spectral photoconductivity and in-plane photovoltage, at temperatures between 30 K and 300 K, in sequentially grown GaInNAs/GaAs and GaInAs/GaAs quantum well structures. Our results indicate that thermal annealing not only improves the sample quality but also causes the blueshift as commonly observed by other groups in optical studies. We show that the observed anneal-induced blueshift behaviour can be explained in terms of two competing mechanisms: the redistribution of nearest neighbour configuration and the change of quantum well profile. We also show that thermal annealing increases the intensity of photoconductivity signal but reduces the in-plane photovoltage signal drastically.

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Photovoltaics literature survey (No. 23)

Richards

2003

Progress in Photovoltaics

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In-plane photovoltaic and photoconductive effects on GaInAs and GaInNAs double quantum well structures

Cited by 4 publications

References 6 publications

Photo-induced transient spectroscopy of defect levels in GaInNAs

Photo-induced transient spectroscopy of defect levels in GaInNAs

Spectral photoconductivity and in-plane photovoltage studies of as-grown and annealed GaInNAs/GaAs and GaInAs/GaAs quantum well structures

Photovoltaics literature survey (No. 23)

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