2002
DOI: 10.4028/www.scientific.net/msf.389-393.303
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In Situ Etching of SiC Wafers in a CVD System Using Oxygen as the Source

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Cited by 12 publications
(4 citation statements)
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“…These BE values are in agreement with other values found by other authors, [3][4][5] for SiC and [4,[6][7][8] for SiO 2 . Concerning the intermediate peak, located at 102 e.V., we can attribute it to SiOH [9] or to an interfacial silicon oxicarbide SiO X C Y [4][5][6][7] or Si suboxide [8]. The fact that the area ratio SiOH / SiO 2 increased when using grazing incidence angle of analysis (not reported here) indicates that the unknown component is present over SiO 2 presumably as SiOH.…”
Section: Si 2psupporting
confidence: 93%
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“…These BE values are in agreement with other values found by other authors, [3][4][5] for SiC and [4,[6][7][8] for SiO 2 . Concerning the intermediate peak, located at 102 e.V., we can attribute it to SiOH [9] or to an interfacial silicon oxicarbide SiO X C Y [4][5][6][7] or Si suboxide [8]. The fact that the area ratio SiOH / SiO 2 increased when using grazing incidence angle of analysis (not reported here) indicates that the unknown component is present over SiO 2 presumably as SiOH.…”
Section: Si 2psupporting
confidence: 93%
“…Two of those peaks represent SiC and SiO 2 , located respectively at binding energy values of 100.8 and 103 e.V. These BE values are in agreement with other values found by other authors, [3][4][5] for SiC and [4,[6][7][8] for SiO 2 . Concerning the intermediate peak, located at 102 e.V., we can attribute it to SiOH [9] or to an interfacial silicon oxicarbide SiO X C Y [4][5][6][7] or Si suboxide [8].…”
Section: Si 2psupporting
confidence: 91%
“…In this work, comparative studies of n-type doping by epitaxial growth using nitrogen and phosphorous have been made. Preliminary work on phosphorous doping was presented earlier [9].…”
Section: Introductionmentioning
confidence: 99%
“…5(c) correspond to Si-N (397.7 eV; 12), sp 3 C-N (398.2 eV; 13), sp 1 CN (399.3 eV; 14), and sp 2 C-N (400.1 eV; 15). 23,[25][26][27][28][29][30][31][32] In Fig. 5(a), there are C-Si components in the Si-N-DLC and Si-DLC films.…”
Section: Resultsmentioning
confidence: 99%