2020
DOI: 10.1002/adma.201908108
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In Situ Formed Gradient Bandgap‐Tunable Perovskite for Ultrahigh‐Speed Color/Spectrum‐Sensitive Photodetectors via Electron‐Donor Control

Abstract: Integration of various photodetectors with different light‐sensitive materials and detection capacity is an inevitable way to achieve entire color/spectrum detection. However, the uneven capacity of each photodetector would drag the overall performance behind, especially the response speed. A response time down to nanosecond level has not previously been reported for a filter‐free color/spectrum‐sensitive photodetector, as far as is known. Here, a self‐powered filterless color‐sensitive photodetection array ba… Show more

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Cited by 70 publications
(66 citation statements)
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“…Such localized patterns of bandgap gradients possess major potential applications, including multicolour LEDs and complex designs of colour sensors. In addition to the rainbow perovskite, the device can also be obtained by using various compositionally graded semiconductors (such as Si 1− x Ge x (0.7–1.1 eV), V x Zn y O (0.6–3.3 eV), ZnO x N y (1.0–3.3 eV), In x Ga 1− x N (0.7–3.4 eV), and CdS x Se 1− x (1.7–2.4 eV)), multiple device configurations (including semiconductor films with vertical bandgap-gradient distributions, conducting films blended with bandgap-gradient semiconductor nanoparticles, and semiconductor nanowires with axial GBGs) and different fabrication technologies 14 , 15 , 39 42 , which can lead to a variety of device characteristics. For instance, arrays of devices with high photon energy responsivity can be obtained by using conducting films blended with bandgap-gradient CsPbX 3 quantum dots 43 .…”
Section: Discussionmentioning
confidence: 99%
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“…Such localized patterns of bandgap gradients possess major potential applications, including multicolour LEDs and complex designs of colour sensors. In addition to the rainbow perovskite, the device can also be obtained by using various compositionally graded semiconductors (such as Si 1− x Ge x (0.7–1.1 eV), V x Zn y O (0.6–3.3 eV), ZnO x N y (1.0–3.3 eV), In x Ga 1− x N (0.7–3.4 eV), and CdS x Se 1− x (1.7–2.4 eV)), multiple device configurations (including semiconductor films with vertical bandgap-gradient distributions, conducting films blended with bandgap-gradient semiconductor nanoparticles, and semiconductor nanowires with axial GBGs) and different fabrication technologies 14 , 15 , 39 42 , which can lead to a variety of device characteristics. For instance, arrays of devices with high photon energy responsivity can be obtained by using conducting films blended with bandgap-gradient CsPbX 3 quantum dots 43 .…”
Section: Discussionmentioning
confidence: 99%
“…x Se 1−x (1.7-2.4 eV)), multiple device configurations (including semiconductor films with vertical bandgap-gradient distributions, conducting films blended with bandgap-gradient semiconductor nanoparticles, and semiconductor nanowires with axial GBGs) and different fabrication technologies 14,15,[39][40][41][42] , which can lead to a variety of device characteristics. For instance, arrays of devices with high photon energy responsivity can be obtained by using conducting films blended with bandgap-gradient CsPbX 3 quantum dots 43 .…”
Section: Ev) and Cdsmentioning
confidence: 99%
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“…© 2020 Wiley-VCH GmbH bandgap. [116] The unique composition of the perovskite film was realized by deposition between a temperature gradient from -20 °C to 210 °C. Encouragingly, a nanosecond response speed is achieved in all the ingredient photodetectors due to improved junction capacitance (vide supra).…”
Section: (14 Of 23)mentioning
confidence: 99%
“…For this reason, by combining with wave destructive interference, we introduce the design concept of GRIN PnCs to overcome the shortcomings of bandgap structure with a narrow frequency range. A similar method using gradient design to overcome narrow bandgaps can be found in Wang et al and Sun et al [34,36] However, with the gradient index, unlike the previous GRIN PnCs, we extend the original concept of gradient refractive index to the functionally graded structure, that is, the gradient arrangement of unit cells with different bandgaps. The remainder of this article is organized as follows.…”
Section: Introductionmentioning
confidence: 99%