In situ growth of SiC nanowires by carbothermal reduction using a mixture of low-purity SiO2 and carbon

Structural and Optical Properties of ZnO Nanowires Doped with Magnesium

“…The major advantage of this method should lie in its ability to decrease the temperature from 1975 K (which is essential for ZnO powder to melt) to lower than 1000 K: more specifically, its advantage is in its potential for industrial production. This method can possibly be extended to preparation of many other semiconductor nanowires, such as In 2 O 3 [26], SiC [27], SiO 2 [28], Si 3 N 4 [29], etc.…”

Synthesis and characterization of 3C and 2H-SiC nanocrystals starting from SiO2, C2H5OH and metallic Mg

“…Various methods have been developed for the synthesis of SiC nanocrystals, such as the carbothermal reduction reaction [4,5], chemical vapor reaction [6], sol-gel [7,8], self-propagating high temperature synthesis [9], autoclave route [10][11][12][13][14][15] and so on. Among these methods, prepare SiC in an autoclave is one of the effective routes at low temperature, such as the reactant systems: SiCl 4 -Na-C [10] or SiCl 4 -Na-C 6 Cl 6 [11] at 600 • C, SiCl 4 -Na-CCl 4 at 400 • C [12], SiCl 4 -Na-K-CBr 3 H at 130 • C [13], or sulfur-assisted reduction route (Si-S-Na-C 2 Cl 4 ) at 130 • C [14].…”

“…Among these methods, prepare SiC in an autoclave is one of the effective routes at low temperature, such as the reactant systems: SiCl 4 -Na-C [10] or SiCl 4 -Na-C 6 Cl 6 [11] at 600 • C, SiCl 4 -Na-CCl 4 at 400 • C [12], SiCl 4 -Na-K-CBr 3 H at 130 • C [13], or sulfur-assisted reduction route (Si-S-Na-C 2 Cl 4 ) at 130 • C [14]. Moreover, 2H-SiC nanoflakes also have been prepared in an autoclave at 180 • C [15].…”

“…In the previous reports [13][14][15], SiCl 4 and Si were chosen as silicon sources, C 2 Cl 4 and CBr 3 H were used as carbon sources, Na-K alloy and Na were used as reductant. Among the silicon precursors used to synthesize SiC, SiO 2 is widely used due to the low cost, such as SiO 2 -carbon black at 1200-1600 • C [4,5], Si-SiO 2 -C 3 H 6 at 1250 • C [6], and so on. However, there are fewer reports about the synthesis of SiC by using SiO 2 as silicon sources at relative low temperature (below 1000 • C).…”

Silicon carbide- from synthesis to application: a review

“…Since the majority of research works related to nanostructure are focusing on 1D [5], the various types of 1D-nanostructure have been established with many synthesization techniques developed from time to time including the sol-gel [12], vapor-liquid-solid [8], vapor-solid [2], laser ablation [6] and chemical vapor deposition (CVD) methods [9]. Among the various types of 1D nanostructure materials available, their specific names were classified based on their unique shapes and sizes such as nanowires, nanorods, nanocables, nanotubes and nanobelts [7], [8].…”