Synthesis and characterization of 3C and 2H-SiC nanocrystals starting from SiO2, C2H5OH and metallic Mg

A simple catalyst-free route for large-scale synthesis of SiC nanowires

“…2 is the FT-IR transmittance spectrum of the sample synthesized by mixing ratio of silicon:EG of 2:1. The strong peak centered at 820 cm −1 corresponds to the transverse optical (TO) photon vibration mode of the Si-C bonds [ [28][29][30]. The low intensity broad band at 1250 cm −1 is assigned to the presence of a small fraction of silica.…”

3C-SiC nanowires and micro-scaled polyhedra: Synthesis, characterization and properties

“…This phenomenon is frequently found under TEM observations in our experiment. Solid particles located at the tip or bending site of these nanowires revealing that the as-obtained SiC nanowires may grow via a vapor-liquid-solid (VLS) growth mechanism [31,46,47]. Fig.…”

“…In this case, synthesis of SiC at low temperature is still a practical challenge. Most recently, 3C-SiC had been synthesized at low temperature, for example, a sulfur-assisted reduction route (Si-S-Na-C 2 Cl 4 ) at 130 • C [30], using Na-K alloy as reductants (SiCl 4 -Na-K-CHBr 3 ) at 130 • C [9], and by the system of SiO 2 -C 2 H 5 OH-Mg at 200 • C [31].…”

Quasi-monodisperse β-SiC nanospheres: Synthesis and application in chemical-mechanical polishing

“…Glucose readily dissolved in these water droplets due to the presence of hydrogen bonds. With the increase of temperature, glucose can transform into carbon through a hydrothermal carbonization process [22,28], while SiO 2 has been reduced to Si by Mg powder [20]:…”

“…Normally, SiC has been prepared by the high temperature approach ( > 1000°C), including solid state reaction [6], carbothermal reduction [7,8], sol-gel process [9,10], thermal decomposition [11], self-propagating hightemperature route [12], electrospinning [13][14][15], chemical vapor deposition [16] and molten salt synthesis [17,18]. Recently, Qian et al have developed hydrothermal/solvothermal technique to prepare SiC nanomaterials at low temperature (120-700°C) [19][20][21][22]. However, SiC particles obtained by the above methods often have sharp edges and corners and wide size distributions [23], which are apt to scratch wafers and cause rough surfaces.…”