In situ infrared absorption spectroscopy for thin film growth by atomic layer deposition

Wang, Yu; Dai, Min; Rivillon, Sandrine; Ho, Ming Tsung; Chabal, Yves J.

doi:10.1117/12.681331

Cited by 4 publications

(3 citation statements)

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“…Excess reagent is removed after reaction, and the sample is rinsed sequentially with tetrahydrofuran (THF), dichloromethane, hot 10% acetic acid, and DI water, and then dried in N 2 gas. After introduction into a home-built ALD reactor connected to a Fourier transform infrared (FTIR) spectrometer (Nicolet Nexus 670 with external MCT-B detector), , the Si(111)−(CH 2 ) 10 −COOH sample is preannealed at 120 °C in dry N 2 gas (300 sccm flow), purified in a Centorr model 2A N 2 purifier (<10 −8 Torr H 2 O and O 2 pressures), in order to further stabilize the SAMs and remove physically adsorbed species. During ALD processing, the system is continuously pumped at all times.…”

Section: Methodsmentioning

confidence: 99%

“…In situ IR absorption measurements are performed in transmission (∼70° incidence) through two KBr IR windows. These salt windows are protected from moisture and contamination during ALD and D 2 O pulses by closing two gate valves separating the windows from the reactor during precursor exposure. , To maintain a good temperature control and minimize the artifacts due to bulk silicon phonon absorption, the sample temperature is kept at 60 °C for data acquisition and raised to 100 °C during ALD growth, using alternate pulses of TMA and D 2 O. Note that D 2 O is used to distinguish environmental water from water from the ALD process in the spectra, with no impact on the chemistry.…”

Section: Methodsmentioning

confidence: 99%

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Atomic Layer Deposition of Aluminum Oxide on Carboxylic Acid-Terminated Self-Assembled Monolayers

Dai

Chabal

2009

Langmuir

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In situ infrared absorption spectroscopy is used to monitor atomic layer deposition (ALD) of aluminum oxide (Al2O3) on carboxylic acid-terminated self-assembled monolayers (SAMs), Si(111)-(CH2)10-COOH (or COOH-SAMs), directly grafted on silicon (111) at approximately 100 degrees C. The quality of resulting Al2O3 films is comparable to Al2O3 on SiO2. Both the SAM film and the Si/SAM interface remain chemically stable during growth and upon post annealing to 400 degrees C, suggesting that the tight packing of the alkyl chains and COOH-SAM head groups presents a diffusion barrier and promotes ordered nucleation for ALD.

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Atomic Layer Deposition of Aluminum Oxide on Carboxylic Acid-Terminated Self-Assembled Monolayers

Dai

Chabal

2009

Langmuir

Self Cite

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“…The negative band around 2100 cm -1 indicates the loss of all Si-H during the nitridation at 600 o C. A peak centered at 1547 cm -1 is associated with the scissor mode of NH 2 (13). The SiN x phonon modes (TO/LO) are observed at 840 cm -1 and 1058 cm -1 showing the formation of a SiN x layer (14,15). A noticeable peak centered at 936 cm -1 may be caused by the loss of Si-H 2 (dihydride scissor mode).…”

Section: Wavenumbers (Cmmentioning

confidence: 99%

In-situ FTIR Study of Atomic Layer Deposition (ALD) of Copper Metal Films

et al. 2007

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Growth mechanisms of atomic layer deposition of copper films on various substrates using a novel metal precursor [Cu(sBu-amd)]2 and molecular H2 are investigated by in-situ transmission Fourier transform infrared spectroscopy (FTIR). The Cu-precursor reacts with SiO2 and Al2O3 surfaces by forming chemical bonds with the surface. Upon reduction by H2, Cu atoms agglomerate, yielding additional reactive sites for more Cu-precursors. Cu agglomeration is relatively weaker on nitrided Si surfaces. H-terminated Si surfaces show a minimal reaction with the Cu precursor. The growth rates of the Cu films on all these surfaces are all less than 1 Aå per cycle.

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Nitrogen interaction with hydrogen-terminated silicon surfaces at the atomic scale

et al. 2009

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Passivation of semiconductor surfaces is conveniently realized by terminating surface dangling bonds with a monovalent atom such as hydrogen using a simple wet chemical process (for example, HF treatment for silicon). However, the real potential of surface chemical passivation lies in the ability to replace surface hydrogen by multivalent atoms to form surfaces with tailored properties. Although some progress has been made to attach organic layers on top of H-terminated surfaces, it has been more challenging to understand and control the incorporation of multivalent atoms, such as oxygen and nitrogen, within the top surface layer of H-terminated surfaces. The difficulty arises partly because such processes are dominated by defect sites. Here, we report mechanistic pathways involved in the nitridation of H-terminated silicon surfaces using ammonia vapour. Surface infrared spectroscopy and first-principles calculations clearly show that the initial interaction is dominated by the details of the surface morphology (defect structure) and that NH and NH(2) are precursors to N insertion into Si-Si bonds. For the dihydride-stepped Si(111) surface, a unique reaction pathway is identified leading to selective silazane step-edge formation at the lowest reaction temperatures.

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In situ infrared absorption spectroscopy for thin film growth by atomic layer deposition

Cited by 4 publications

References 0 publications

Atomic Layer Deposition of Aluminum Oxide on Carboxylic Acid-Terminated Self-Assembled Monolayers

Atomic Layer Deposition of Aluminum Oxide on Carboxylic Acid-Terminated Self-Assembled Monolayers

In-situ FTIR Study of Atomic Layer Deposition (ALD) of Copper Metal Films

Nitrogen interaction with hydrogen-terminated silicon surfaces at the atomic scale

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