In-situ mapping of local orientation and strain in a fully operable infrared sensor

Yildirim, Can; Brellier, D.; Pesci, Raphaël; Boulard, F.; Baier, N.; Zhou, Tao; Nguyen-Thanh, T.; Gergaud, P.; Schülli, Tobias U.; Ballet, P.

doi:10.1016/j.actamat.2021.117290

Cited by 3 publications

(3 citation statements)

References 30 publications

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“…[6][7][8] In the SWIR photodetectors and imaging sensors, narrow-bandgap semiconductor materials are the key components, and of vital important. Mercury cadmium telluride (HgCdTe), [9,10] indium antimonide (InSb), [11,12] indium gallium arsenide (InGaAs), [13,14] Si, [15,16] and germanium (Ge) [17,18] are typical representatives of narrow-bandgap semiconductor bulk materials, which have been widely used in infrared detecting. However, with the rapid growth in demand for human wearable electronic devices, the aforementioned bulk materials have seriously hindered the develo pment of civil consumer electronics due to many challenges involving epitaxial growth devices, high material toxicity, and the inability to achieve flexible devices manufacturing.…”

Section: Short-wave Infrared Photodetectors and Imaging Sensors Based...mentioning

confidence: 99%

Short‐Wave Infrared Photodetectors and Imaging Sensors Based on Lead Chalcogenide Colloidal Quantum Dots

Cai

et al. 2022

Advanced Optical Materials

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Lead chalcogenide quantum dots (QDs) are one of the next generations of ideal narrow bandgap infrared semiconductors, due to their succinct solution processing, low‐cost fabrication, size‐tunable infrared bandgap, and excellent optoelectronic properties. Tremendous efforts including synthesis methods, surface ligand engineering, and device architecture engineering, drastically contribute to the significant improvement of the performance of the photodetectors based on QDs. In recent years, with the rapid development of consumer electronics, short‐wave infrared (SWIR) imaging sensors are in urgent demand. Thanks to the flexible manipulation of the QD thin film deposition process, a variety of QD‐based imaging technologies have been studied, including single‐pixel imaging sensors, integrated imaging sensors with readout circuit, and upconversion imaging sensors, which can effectively reduce the cost of SWIR imaging sensors and promote the commercial application in the consumer electronics. Herein, recent advances of QD‐based photodetectors and imaging sensors are summarized, emphatically focusing on the synthesis of QDs, surface ligand engineering, device architecture engineering, and imaging technology.

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Section: Short-wave Infrared Photodetectors and Imaging Sensors Based...mentioning

confidence: 99%

Short‐Wave Infrared Photodetectors and Imaging Sensors Based on Lead Chalcogenide Colloidal Quantum Dots

Cai

et al. 2022

Advanced Optical Materials

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“…Over the years, many diffraction-based 3D mapping approaches have been developed and used, but they have several limitations; for example, electron-microscopy methods (Liu et al, 2011) are destructive, and 3D X-ray diffraction (Poulsen et al, 2001;Poulsen, 2004) and diffraction contrast tomography (Ludwig et al, 2009) are restricted by the detector to a spatial resolution of 1 mm. However, dark-field X-ray microscopy (DFXM) is non-destructive (Yildirim et al, 2021), is very well suited to simultaneous multiscale characterization (Simons et al, 2015) or in situ measurements (Yildirim et al, 2021), and can achieve direct spatial resolutions of 30-100 nm (Kutsal et al, 2019) and a time resolution of 100 ms (Holstad et al, 2022). The application of this technique has been largely demonstrated for metallurgical studies (Maziarz et al, 2010), fuel cells (Longo et al, 2020) and biominerals (Cook et al, 2018), and it is only rarely performed on microelectronics devices (Jakobsen et al, 2019).…”

Section: Introductionmentioning

confidence: 99%

“…Among the other particularities of this technique is its ability to provide 3D mapping of strain and orientations in crystalline materials at the nanoscale and to generate a real-space image of the illuminated volume. The European Synchrotron Radiation Facility (ESRF) provides advanced techniques to study matter at the nanoscale with DFXM at the ID06-HXM beamline (Yildirim et al, 2021). The energy ranges from 11 to 55 keV with a minimum beam size of 30.0 Â 0.5 mm 2 (h Â v) and a maximum beam size of 2.0 Â 0.5 mm 2 (h Â v).…”

Section: Introductionmentioning

confidence: 99%

Study of GaN coalescence by dark-field X-ray microscopy at the nanoscale

Wehbe

Charles

Baril³

et al. 2023

J Appl Crystallogr

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This work illustrates the potential of dark-field X-ray microscopy (DFXM), a 3D imaging technique of nanostructures, in characterizing novel epitaxial structures of gallium nitride (GaN) on top of GaN/AlN/Si/SiO2 nano-pillars for optoelectronic applications. The nano-pillars are intended to allow independent GaN nanostructures to coalesce into a highly oriented film due to the SiO2 layer becoming soft at the GaN growth temperature. DFXM is demonstrated on different types of samples at the nanoscale and the results show that extremely well oriented lines of GaN (standard deviation of 0.04°) as well as highly oriented material for zones up to 10 × 10 µm2 in area are achieved with this growth approach. At a macroscale, high-intensity X-ray diffraction is used to show that the coalescence of GaN pyramids causes misorientation of the silicon in the nano-pillars, implying that the growth occurs as intended (i.e. that pillars rotate during coalescence). These two diffraction methods demonstrate the great promise of this growth approach for micro-displays and micro-LEDs, which require small islands of high-quality GaN material, and offer a new way to enrich the fundamental understanding of optoelectronically relevant materials at the highest spatial resolution.

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A finite element method to calculate geometrically necessary dislocation density: Accounting for orientation discontinuities in polycrystals

et al. 2023

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In-situ mapping of local orientation and strain in a fully operable infrared sensor

Cited by 3 publications

References 30 publications

Short‐Wave Infrared Photodetectors and Imaging Sensors Based on Lead Chalcogenide Colloidal Quantum Dots

Short‐Wave Infrared Photodetectors and Imaging Sensors Based on Lead Chalcogenide Colloidal Quantum Dots

Study of GaN coalescence by dark-field X-ray microscopy at the nanoscale

A finite element method to calculate geometrically necessary dislocation density: Accounting for orientation discontinuities in polycrystals

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