In situ monitoring and benchmarking in UHV of InP/GaAsSb heterointerface reconstructions prepared via MOVPE

Growth of an InGaAs/GaAsSb tunnel junction for an InP-based low band gap tandem solar cell

“…Interfaces between an Sb-containing layer and an Sb-free layer are known to suffer from the segregation of Sb [15,16]. The GaAsSb/InP hetero-interface, prepared with MOCVD was already investigated before [14,17]. Two different types of GaAsSb surface reconstructions had been observed: an As-rich cð4 Â 4Þ and an Sb-rich ð1 Â 3Þ-like.…”

“…The investigations in Refs. [14,17] were made for an GaAsSb/InP interface grown at 500 C. In our case the InGaAsP top cell must be grown at 600 C on top of the InP layer. There are different options of the preparation routes differing in the growth temperature of the GaAsSb and InP layer.…”

Atomic ordering in GaAsSb (001) grown by metalorganic vapor phase epitaxy

“…Surface reconstructions with three-fold ordering along [11 0] have been reported for GaSb and GaAsSb. Several groups have observed ð1 Â 3Þ surface reconstructions in static MOVPE-grown GaAsSb surfaces [26][27][28]. A [11 0] cross-section diagram of a previously postulated ð1 Â 3Þ surface is shown in Fig.…”