Atomic ordering in GaAsSb (001) grown by metalorganic vapor phase epitaxy

Jiang, Weilin; Kavanagh, K. L.; Watkins, Simon P.

doi:10.1016/j.jcrysgro.2009.07.033

Cited by 6 publications

(1 citation statement)

References 31 publications

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“…To summarize, a two-band transport analysis at 77 K reveals clear L-valley population effects and allows a determination of a C-L valley separation D CL ¼ 91 meV in GaAs 0.51 Sb 0.49 . Based on the temperature variation of D CL in GaAs and GaSb, 84 < D CL < 95 meV is estimated at 300 K. Whereas atomic ordering has been reported in GaAsSb, 46,47 the GaAsSb layers considered here show no atomic ordering. Comparison to GaInP suggests atomic ordering would reduce the direct energy gap and increase D CL in GaAsSb.…”

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confidence: 78%

Г-L intervalley separation and electron mobility in GaAsSb grown on InP: Transport comparison with the GaInAs and GaInAsSb alloys

Bolognesi

Ostinelli

2021

Applied Physics Letters

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GaAs 0.51 Sb 0.49 is lattice-matched to InP and finds electron transport applications in base or absorber layers in high-speed heterostructure bipolar transistors or photodiodes, because its staggered ("type-II") band alignment with InP favors electron injection across abrupt heterojunctions. Little remains known about electron transport properties and band structure details of GaAs x Sb 1Àx near x ¼ 0.5. Particularly, based on the C-L intervalley separation in binary constituents (D CL ¼ 84 meV in GaSb and 290 meV in GaAs at 300 K), interpolation suggests a low C-L separation in GaAs 0.51 Sb 0.49 before considering energy gap bowing effects. To gain insight into electron transport in GaAs 0.51 Sb 0.49 , we characterized experimental Hall electron mobilities vs carrier concentration at 300 and 77 K in n-type GaAs 0.51 Sb 0.49 , Ga 0.47 In 0.53 As, and Ga 0.76 In 0.24 As 0.67 Sb 0.33 alloys nearly matched to InP. In marked contrast to the other two alloys, GaAs 0.51 Sb 0.49 exhibits a sharp rise in 77 K electron mobility, which evidences L-valley de-population for lower electron concentrations. A two-band transport analysis reveals a C-L valley separation D CL ¼ 91 meV at 77 K, significantly lower than values recommended in the literature. Based on the reported temperature variations of D CL in GaAs and GaSb, 84 < D CL < 95 meV is expected at 300 K. The corresponding GaAs x Sb 1Àx L-valley bowing parameter is c L ¼ 1.63 eV, significantly higher than the 1.1-1.2 eV recommended in the literature. In contrast to GaAs x Sb 1Àx , GaInAsSb grown on InP displays a strong alloy scattering, which limits its low-temperature electron mobility.

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confidence: 78%