In situ monitoring of the growth of Cu(In,Ga)Se2 thin films

Chityuttakan, Chanwit; Chinvetkitvanich, Panita; Yoodee, Kajornyod; Chatraphorn, S.

doi:10.1016/j.solmat.2006.06.038

Cited by 14 publications

(5 citation statements)

References 4 publications

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“…The deposition rates of the elemental sources are calibrated by a quartz crystal and a beam flux monitor. The substrates are heated by a resistive heating element and the in-situ monitoring signals from a thermocouple and a pyrometer are used as the controlled signals of the growth process along with the end point detection (EPD) [8]. The standard 3-stage growth process [8] is employed in the fabrication of the CIGS films.…”

Section: Methodsmentioning

confidence: 99%

“…The substrates are heated by a resistive heating element and the in-situ monitoring signals from a thermocouple and a pyrometer are used as the controlled signals of the growth process along with the end point detection (EPD) [8]. The standard 3-stage growth process [8] is employed in the fabrication of the CIGS films. We note that a 200Å thick NaF precursor is deposited prior to the growth of the CIGS in the same deposition chamber with no alkaline barrier between the SLG substrate and the Mo layer.…”

Section: Methodsmentioning

confidence: 99%

See 1 more Smart Citation

Growth characteristics of Cu(In,Ga)Se2 thin films using 3-stage deposition process with a NaF precursor

Sakdanuphab

Chityuttakan

Pankiew

et al. 2011

Journal of Crystal Growth

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Growth characteristics of Cu(In,Ga)Se2 thin films using 3-stage deposition process with a NaF precursor

Sakdanuphab

Chityuttakan

Pankiew

et al. 2011

Journal of Crystal Growth

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“…The element sources of Cu, In, Ga and Se were evaporated form Knudsen cells (K-cells) and the temperatures of these sources were calibrated by quartz crystal monitor (QCM) and beam flux monitor for the corresponding compositions of each element. The in situ monitoring signals were employed for process control and end point detection (EPD) [8].…”

Section: Growth Profile Of Cigs Thin Filmmentioning

confidence: 99%

The Advantages of Ga-Graded Obtained by Growth Profile Modification and Na Incorporation on Cu(In,Ga)Se2 Solar Cells

Sakdanuphab

Chatraphorn

Yoodee

2014

AMR

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Cu (In,Ga)Se2 (CIGS) compound is a p-type semiconductor that has been used as light absorber layer in high efficiency thin film solar cell. The CIGS compound can be adjusted the band gap energy by varying the ratio of [Ga]/([In]+[Ga]) ratio (x). From theoretical and simulation, it was found that band gap grading in CIGS thin films showed the advantages to increase the efficiency of solar cells. Generally, the band gap grading can be done by the growth of non homogeneous x-ratio in depth of CIGS thin films. In this work, we develop two approaches to create band gap grading in CIGS thin films; (1) modifying the growth profile and (2) using Na incorporation in the growth process. The effects of Ga-graded would be revealed and compared with homogeneous CIGS thin films. CIGS thin films were grown on soda-lime glass and Al2O3 coated soda-lime glass substrates by molecular beam deposition method. The growth process was based on 2-stage and 3-stage growth profiles. The as grown films were characterized for their structural property, chemical composition and optical transmission as well as solar cell performance. The Auger electron spectroscopy in depth profiles revealed the variation of x-ratio increasing from the surface toward the back contact in CIGS films with our modified growth profile and Na incorporation. This result indicated Ga-graded in CIGS thin films. The structural property of Ga-graded CIGS films showed the (112) preferred orientation of the chalcopyrite structure with a broad asymmetric spectrum related to the inhomogeneous structure. The optical transmission measurements of the Ga-graded CIGS film showed the broad transition near the absorption edge indicating the effect of the band gap grading as a result of the variation in depth of the Ga-content. From I-V measurements, the solar cell efficiencies significantly increase due to the advantages of Ga-graded constitute.

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“…The chalcopyrite semiconductor CuIn 1-x Ga x Se 2 (copper indium gallium selenium, CIGS) as the absorber layer of thin-film solar cell, is fast becoming one of the most prominent thin-film photovoltaic materials due to its characteristic that the direct energy gap of CIGS results in a large optical absorption coefficient (10 5 cm −1 ) [3], which in turn permits the use of thin absorber layers (1-2 µm) of active material [4,5] for photovoltaic device applications. The conversion efficiency of CIGS solar cells up to 19.95% (NREL, 2006), more than polycrystalline silicon conversion efficiency of 14%-16% [6].…”

Section: Introductionmentioning

confidence: 99%

Synthesis of CuInxGa1-xSe2 Powder by High-Pressure Stirring Solvothermal Method

Xie

Zou

Long

et al. 2010

AMR

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In the paper a high-pressure stirring solvothermal method with ethylenediamine as a solvent was used to prepare CIGS powders. The impact factors of reaction temperature and holding time on product-phase and morphology were investigated. The increasing reaction temperature make a important impact on the phase of product and the increasing holding time has much effect on the product morphology. CIGS particles (8-10 μm) were successfully synthesized at reaction temperatures in the range of 200-250 °C for different holding times.

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In situ monitoring of the growth of Cu(In,Ga)Se2 thin films

Cited by 14 publications

References 4 publications

Growth characteristics of Cu(In,Ga)Se2 thin films using 3-stage deposition process with a NaF precursor

Growth characteristics of Cu(In,Ga)Se2 thin films using 3-stage deposition process with a NaF precursor

The Advantages of Ga-Graded Obtained by Growth Profile Modification and Na Incorporation on Cu(In,Ga)Se<sub>2</sub> Solar Cells

Synthesis of CuIn<sub>x</sub>Ga<sub>1-x</sub>Se<sub>2</sub> Powder by High-Pressure Stirring Solvothermal Method

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