In Situ Nanolithography with Sub‐10 nm Resolution Realized by Thermally Assisted Spin‐Casting of a Self‐Assembling Polymer

Lee, Jung Hye; Kim, Yong Joo; Cho, Joong Yeon; Yang, Se Ryeun; Kim, Jong Min; Yim, Soonmin; Lee, Heon; Jung, Yeon Sik

doi:10.1002/adma.201501363

Cited by 21 publications

(17 citation statements)

References 58 publications

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“…Moreover, generic high order–disorder transition temperatures ( T ODT ) of the high‐χ BCPs, typically above their thermal degradation temperatures, commonly prevent typical thermal annealing processes from being used in a high ordered self‐assembly in a reasonable time scale . Instead, a variety of solvent vapor treatment methods, such as solvo‐thermal, solvo‐microwave annealing, and worm‐spin casting methods, have been proposed to enhance the chain diffusivity of high‐χ BCPs by temporally reducing the χ values through solvent dilution . Nonetheless, difficult controllability of the solvent vapor pressure over a large wafer‐scale area as well as other practical issues, including easy dewetting of solvent swollen BCP films, commonly makes it hard to employ these approaches for viable device manufacture process.…”

Section: Properties Of the Bcps Of Low‐χ Sm (Ps‐b‐pmma) S2v (Ps‐b‐p2mentioning

confidence: 99%

Flash Light Millisecond Self‐Assembly of High χ Block Copolymers for Wafer‐Scale Sub‐10 nm Nanopatterning

et al. 2017

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One of the fundamental challenges encountered in successful incorporation of directed self-assembly in sub-10 nm scale practical nanolithography is the process compatibility of block copolymers with a high Flory-Huggins interaction parameter (χ). Herein, reliable, fab-compatible, and ultrafast directed self-assembly of high-χ block copolymers is achieved with intense flash light. The instantaneous heating/quenching process over an extremely high temperature (over 600 °C) by flash light irradiation enables large grain growth of sub-10 nm scale self-assembled nanopatterns without thermal degradation or dewetting in a millisecond time scale. A rapid self-assembly mechanism for a highly ordered morphology is identified based on the kinetics and thermodynamics of the block copolymers with strong segregation. Furthermore, this novel self-assembly mechanism is combined with graphoepitaxy to demonstrate the feasibility of ultrafast directed self-assembly of sub-10 nm nanopatterns over a large area. A chemically modified graphene film is used as a flexible and conformal light-absorbing layer. Subsequently, transparent and mechanically flexible nanolithography with a millisecond photothermal process is achieved leading the way for roll-to-roll processability.

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Section: Properties Of the Bcps Of Low‐χ Sm (Ps‐b‐pmma) S2v (Ps‐b‐p2mentioning

confidence: 99%

Flash Light Millisecond Self‐Assembly of High χ Block Copolymers for Wafer‐Scale Sub‐10 nm Nanopatterning

et al. 2017

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“…A small variation of the environmental ). For Wsc [86], Microwave [85], PdMs pad [88], and idsA [87] M n = 16 (kg mol −1 ). For svA [64,77,83,84,89], the M n = 16 (kg mol −1 ) and 28 (kg mol −1 ).…”

Section: Discussionmentioning

confidence: 99%

“…sketch of the LeR (a) and LWR (b) adapted from [91]. LeR and LWR values for various annealing methods that include idsA [87], PdMs gel pad [88], Wsc [86], conventional Thermal annealing (TA) [86], svA at room temperature (RT) [86], svA-thermal at 85 °c [77], RTP at 310 °c [69]. The LWR value of idsA method was calculated assuming LWR = √2 LeR.…”

Section: Discussionmentioning

confidence: 99%

“…The SA occurs in short time, as shown in Figure 7(c). High level of lateral order of the cylindrical nanostructures was obtained in patterned topographic templates performing the WSC at 40 °C for 30 s (Figure 7(d)) [86].…”

Section: Exotic Annealing Processesmentioning

confidence: 98%

“…The combined effect of solvent evaporation and temperature promotes phase separation and lateral ordering of the microdomains in the PS-b-PDMS thin films. Figure 7(a) shows the reactor [86]. (e, f) idsA, adapted from [87] (g, h) PdMs gel pad solvent assisted annealing, adapted from [88].…”

Section: Exotic Annealing Processesmentioning

confidence: 99%

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Technological strategies for self-assembly of PS-b-PDMS in cylindrical sub-10 nm nanostructures for lithographic applications

Giammaria

Laus

Perego³

2018

Advances in Physics: X

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The continuous demand for small portable electronics is pushing the semiconductor industry to develop novel lithographic methods to fabricate the elementary structures for microelectronics devices with dimensions below 10 nm. Topdown strategies include multiple patterning photolithography, extreme ultraviolet lithography (EUVL), electron beam lithography (EBL), and nanoimprint lithography. Bottom-up approaches mainly rely on block copolymers (BCPs) self-assembly (SA). SA of BCPs is extremely appealing due to its excellent compatibility with conventional photolithographic processes, high-resolution patterns, and low process costs. Among the various BCPs, the polystyrene-b-polydimethylsiloxane (PS-b-PDMS) represents the most investigated material for the fabrication of sub-10 nm structures. However, PS-b-PDMS cannot be easily processed by conventional thermal treatments due to its slow SA kinetic coupled with a relatively low thermal stability. This review focuses on the available annealing methods to promote the SA PS-b-PDMS in parallel-oriented cylindrical sub-10 nm structures. Moreover, literature data regarding the annealing time, defects density, line edge roughness (LER) and line width roughness (LWR) are discussed with reference to the stringent requirements of semiconductor technology.

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Thermodynamic and Kinetic Tuning of Block Copolymer Based on Random Copolymerization for High‐Quality Sub‐6 nm Pattern Formation

Hur

Song

Kim

et al. 2018

Adv Funct Materials

Self Cite

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The precisely controllable self-assembly phenomenon of block copolymers (BCPs) has garnered much attention because it yields well-defined periodic nanostructures with a periodicity of 5-50 nm. However, from both thermodynamic and kinetic viewpoints, it still remains a challenge to develop a BCP material that can provide sub-10 nm resolution, high pattern quality, fast pattern formation, and sufficient etch selectivity. To address these challenges, this study reports a BCP system containing a random-copolymerized block (poly(2-vinylpyridine-co-4-vinylpyridne)-bpoly(dimethylsiloxane) (P(2VP-co-4VP)-b-PDMS)) that can provide sub-6 nm resolution, 3σ line edge roughness of 0.89 nm, sub-1-min assembly time, and a high etch selectivity over 10. Calculation of the Flory-Huggins interaction parameter (χ) based on Leibler's mean-field theory and smallangle X-ray scattering measurement data confirms the gradual tunability of χ with the controlled addition of 4VP fraction in the P(2VP-co-4VP) block. While guaranteeing kinetically fast self-assembly within one minute using microwave annealing, the best pattern quality resulting from the thermodynamic suppression of line edge fluctuation is achieved with a 4VP weight fraction of 33% in the random-copolymerized block. This approach enables systematical control of sub-6 nm scale BCP self-assembly and will provide a practical patterning solution for diverse nanostructures and devices.

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In Situ Nanolithography with Sub‐10 nm Resolution Realized by Thermally Assisted Spin‐Casting of a Self‐Assembling Polymer

Cited by 21 publications

References 58 publications

Flash Light Millisecond Self‐Assembly of High χ Block Copolymers for Wafer‐Scale Sub‐10 nm Nanopatterning

Flash Light Millisecond Self‐Assembly of High χ Block Copolymers for Wafer‐Scale Sub‐10 nm Nanopatterning

Technological strategies for self-assembly of PS-b-PDMS in cylindrical sub-10 nm nanostructures for lithographic applications

Thermodynamic and Kinetic Tuning of Block Copolymer Based on Random Copolymerization for High‐Quality Sub‐6 nm Pattern Formation

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