In-situ phase formation study of copper indium diselenide absorber layers from CuIn nanoparticles and evaporated selenium

Möckel, Stefan; Hölzing, A.; Hock, Rainer; Wellmann, Peter J.

doi:10.1016/j.tsf.2012.11.081

Cited by 9 publications

(9 citation statements)

References 26 publications

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“…6 shows the development of the surface structure during annealing. All samples show a porous layer and a grain size of about 100 nm which is in the range of Cu-In nanoparticles reported in earlier work [18,21]. The major difference can be found between the as deposited sample and the annealed samples.…”

Section: Ex-situ Phase Characterisation (X = 00)supporting

confidence: 50%

“…Metallic Cu-In nanoparticles (see e.g. [18]) and elemental selenium nanoparticles, comparable to the one used by Dhage et al [19] containing Cu-In-Ga and Se nanoparticles. Furthermore Cu-Ga powder was prepared and dispersed in an ink.…”

Section: Introductionmentioning

confidence: 87%

“…Referring to the phase characterisation of the Cu-Ga powder and the characterisation of the Cu-In nanoparticles [18] the dispersion consists of different Cu-In phases [18], Cu with less than 20 at.% Ga in solid solution, elemental Ga and elemental Se. Fig.…”

Section: In-situ Phase Characterisationmentioning

confidence: 99%

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Low temperature formation of CuIn 1−x Ga x Se 2 solar cell absorbers by all printed multiple species nanoparticulate Se + Cu–In + Cu–Ga precursors

et al. 2015

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Section: Ex-situ Phase Characterisation (X = 00)supporting

confidence: 50%

Section: Introductionmentioning

confidence: 87%

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Low temperature formation of CuIn 1−x Ga x Se 2 solar cell absorbers by all printed multiple species nanoparticulate Se + Cu–In + Cu–Ga precursors

et al. 2015

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“…In situ XRD is a valuable tool to investigate the formation processes of thin film solar cell absorber layers. In the past, it has been used to analyze the selenizaton and sulfo‐selenizaton of Cu–In–Ga precursors layers for Cu(In,Ga)(S,Se) 2 solar cells , the sulfo‐selenization of Cu–In precursor layers for CuIn(S,Se) 2 solar cells , and both the sulfurization and selenization of Cu–Zn–Sn precursor layers for CZTS and CZTSe solar cells . Recently, Rodriguez‐Alvarez et al investigated the growth of CuInSe 2 and CuGaSe 2 by a co‐evaporation process with energy‐dispersive X‐ray diffraction (EDXRD), but a detailed study of CZTSe or CZTS film growth with thermal co‐evaporation has not been performed so far.…”

Section: Introductionmentioning

confidence: 99%

In situXRD investigation of Cu₂ZnSnSe₄thin film growth by thermal co-evaporation

Kaune

Hartnauer

Scheer

2014

Phys. Status Solidi A

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The deposition of a Cu2ZnSnSe4 (CZTSe) thin film with a multi‐stage co‐evaporation process is investigated with time‐resolved in situ X‐ray diffraction (in situ XRD). For the experiment a novel setup intended for in situ analysis of thin film deposition processes was used. The in situ data confirm the former observation that CZTSe growth is delayed with deposition of only Cu2−xSe and ZnSe in the initial process stage and provide new insight into the evolution of the appearing phases. In Zn‐rich deposition conditions, ZnSe deposited at the beginning may not be consumed by the growing CZTSe but remain as an unreacted layer at the interface to the Mo back contact. Cu2−xSe growth starts with the formation of a Cu rich phase, which is reduced to a Cu poor phase in the process. Furthermore, our results show that in situ XRD at elevated temperatures is able to distinguish between ZnSe and CZTSe and that it can be used for the detection of ZnSe as secondary phase.

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“…Therefore, diffusion processes and chemical reactions are hindered and a complete transformation of the precursor was prevented. This could be overcome by an excess of Se NP, as In 2 O 3 has been transformed back to selenide in earlier work [23,24], which can continue the reaction to CISe and consume the possibly left-over Cu 2−x Se. The morphology of the final film needs even more optimization compared with route I in terms of surface coverage and porosity.…”

Section: Discussionmentioning

confidence: 99%

Vacuum-Free and Highly Dense Nanoparticle Based Low-Band-Gap CuInSe2 Thin-Films Manufactured by Face-to-Face Annealing with Application of Uniaxial Mechanical Pressure

et al. 2019

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Copper indium gallium sulfo-selenide (CIGS) based solar cells show the highest conversion efficiencies among all thin-film photovoltaic competition. However, the absorber material manufacturing is in most cases dependent on vacuum-technology like sputtering and evaporation, and the use of toxic and environmentally harmful substances like H2Se. In this work, the goal to fabricate dense, coarse grained CuInSe2 (CISe) thin-films with vacuum-free processing based on nanoparticle (NP) precursors was achieved. Bimetallic copper-indium, elemental selenium and binary selenide (Cu2−xSe and In2Se3) NPs were synthesized by wet-chemical methods and dispersed in nontoxic solvents. Layer-stacks from these inks were printed on molybdenum coated float-glass-substrates via doctor-blading. During the temperature treatment, a face-to-face technique and mechanically applied pressure were used to transform the precursor-stacks into dense CuInSe2 films. By combining liquid phase sintering and pressure sintering, and using a seeding layer later on, issues like high porosity, oxidation, or selenium- and indium-depletion were overcome. There was no need for external Se atmosphere or H2Se gas, as all of the Se was directly in the precursor and could not leave the face-to-face sandwich. All thin-films were characterized with scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), and UV/vis spectroscopy. Dense CISe layers with a thickness of about 2–3 µm and low band gap energies of 0.93–0.97 eV were formed in this work, which show potential to be used as a solar cell absorber.

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In-situ phase formation study of copper indium diselenide absorber layers from CuIn nanoparticles and evaporated selenium

Cited by 9 publications

References 26 publications

Low temperature formation of CuIn 1−x Ga x Se 2 solar cell absorbers by all printed multiple species nanoparticulate Se + Cu–In + Cu–Ga precursors

Low temperature formation of CuIn 1−x Ga x Se 2 solar cell absorbers by all printed multiple species nanoparticulate Se + Cu–In + Cu–Ga precursors

In situXRD investigation of Cu₂ZnSnSe₄thin film growth by thermal co-evaporation

Vacuum-Free and Highly Dense Nanoparticle Based Low-Band-Gap CuInSe2 Thin-Films Manufactured by Face-to-Face Annealing with Application of Uniaxial Mechanical Pressure

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In-situ phase formation study of copper indium diselenide absorber layers from CuIn nanoparticles and evaporated selenium

Cited by 9 publications

References 26 publications

Low temperature formation of CuIn 1−x Ga x Se 2 solar cell absorbers by all printed multiple species nanoparticulate Se + Cu–In + Cu–Ga precursors

Low temperature formation of CuIn 1−x Ga x Se 2 solar cell absorbers by all printed multiple species nanoparticulate Se + Cu–In + Cu–Ga precursors

In situXRD investigation of Cu2ZnSnSe4thin film growth by thermal co-evaporation

Vacuum-Free and Highly Dense Nanoparticle Based Low-Band-Gap CuInSe2 Thin-Films Manufactured by Face-to-Face Annealing with Application of Uniaxial Mechanical Pressure

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In situXRD investigation of Cu₂ZnSnSe₄thin film growth by thermal co-evaporation