In-situ potential mapping of space charge layer in GaN nanowires under electrical field by off-axis electron holography

Study of structure-property relationship of semiconductor nanomaterials by off-axis electron holography

“…GaN/AlN heterostructural NWs grown by plasma-assisted molecular-beam epitaxy are quantitatively studied by electron holography. The obtained potential profile shows obvious deviation of the AlN top region as com-pared to simulations, which could be attributed to positive charging of the NW under electron beam irradiation [23] . Serial research on GaN NWs by in-situ electron holography reveals that the width of the space charge (SC) layer is about 76 nm at static state, and varies between 68 and 91 nm corresponding to the saturated states under forward and shows extra positive phase shifts indicating holes accumulated in this region [18] .…”

Fabrication of Cubic p-n Heterojunction-Like NiO/In2O3 Composite Microparticles and Their Enhanced Gas Sensing Characteristics

“…Presence of space charge layers in semiconductors is a common phenomenon within a heterojunction structure once two semiconductor materials with different band gaps are intimately contacted [15]. In such formed heterojunction layer, free electrons in one material with higher Fermi energy could migrate into the adjacent material spontaneously due to the demand of band alignment until their Fermi levels allied at the same energy, resulting in the opposite charges at two sides of heterostructure interface.…”