Study of structure-property relationship of semiconductor nanomaterials by off-axis electron holography

Abstract

As the scaling down of semiconductor devices, it would be necessary to discover the structure-property relationship of semiconductor nanomaterials at nanometer scale. In this review, the quantitative characterization technique off-axis electron holography is introduced in details, followed by its applications in various semiconductor nanomaterials including group IV, compound and two-dimensional semiconductor nanostructures in static states as well as under various stimuli. The advantages and disadvantages of off-axis electron holography in material analysis are discussed, the challenges facing in-situ electron holographic study of semiconductor devices at working conditions are presented, and all the possible influencing factors need to be considered to achieve the final goal of fulfilling quantitative characterization of the structure-property relationship of semiconductor devices at their working conditions.

Advance TEM application in 10 nm and below technology node chips

“…The TEM base channel strain measurement was used to speed up the etch and epitaxy schemed of e-SiGe. The TEM base strain measurement method including the following 1 : NBD (nano-beam diffrction) 2-3 , HRTEM GPA 4 , CBED (Converge beam electron diffraction) [5][6] , Electron beam Holography [7][8] , and PED (Precession electron diffraction) [9][10][11] . Due to bigger tilted specimen angle from normal [110] or [100] directions for CBED method, The CBED method is not used in device channel strain measurement.…”

Nanoscale Three-Dimensional Charge Density and Electric Field Mapping by Electron Holographic Tomography

“…Off-axis electron holography in the transmission electron microscope (TEM) is a powerful technique that can be used to map projected and three-dimensional (3D) electrostatic potentials, − electric fields, − and charge density distributions − with nanometer to atomic spatial resolution. 3D electrostatic potentials have been measured from tilt series of electron holographic phase images to study dopant potentials in semiconductors, ,,, and the morphologies of nanoscale materials − and 3D electric fields around specimens have been inferred from phase images based on the assumption of rotational symmetry , or have made use of simple analytical models .…”

Preface to the Special Topic on In-Situ and in-operando Characterization of Semiconductor Materials and Devices

“…Zhang et al introduce a comprehensive approach of defect study, i.e., a series mode, to address the issues of traditional parallel mode where defects investigated by structural characterization techniques were not the same defect that affected the device [2] . As demonstrated by the in-operando study of individual dislocation type defects in GaAs solar cells, this novel approach is able to offer answers to questions like: (i) how do individual defects affect device performance?…”