In situ Silicon-Wafer Surface-Temperature Measurements Utilizing Polarized Light

Abstract

An overview is presented on the activity with industrial partners to solve problems at the production sites in the semiconductor industry. Based on a survey on temperature needs and techniques in the semiconductor device fabrication industry, two target processes with the most pressing demands for in situ temperature measurements were selected: plasma etching and flash lamp annealing (FLA). A novel approach for emissivity compensated radiation thermometry was applied to sub-millisecond response measurement for FLA. The approach has features that make it suitable for in situ applications. Results of thermal profile measurements conducted on a FLA chamber are described.

Development of a real-time temperature measurement technique for SiC wafer during ultra-rapid thermal annealing based on optical-interference contactless thermometry (OICT)

“…5) On the other hand, non-contact methods avoid the contamination and uncertainties encountered by contact methods. 6,7) IR thermometers [8][9][10][11][12][13][14] have been the primary method for measuring wafer temperature during URTA, in spite of existing problems in plasma processing. 2) More importantly, none of these methods can measure the internal wafer temperature during URTA.…”