2015
DOI: 10.1039/c4ra12305k
|View full text |Cite
|
Sign up to set email alerts
|

In situ spectroscopic studies of decomposition of ZrSiO4during alkali fusion process using various hydroxides

Abstract: ZrSiO 4 powder synthesized by the sol-gel method is used to study the reaction mechanism of natural zircon mineral treated by an alkali fusion method. The reaction processes are analyzed by in situ Raman spectroscopy. Other characterization experiments using techniques, such as FTIR spectroscopy, TG-DTA and X-ray powder diffraction complement and verify the Raman spectroscopy study. The results reveal that hydroxylation-dehydration play important roles during the alkali-fusion process. Hydroxylation action bre… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

1
11
0
8

Year Published

2017
2017
2022
2022

Publication Types

Select...
7

Relationship

1
6

Authors

Journals

citations
Cited by 25 publications
(20 citation statements)
references
References 46 publications
1
11
0
8
Order By: Relevance
“…It was perceived that Al x Zr y O z films grown at 800 C and 1000 C have disclosed the detection of Raman features allied with Zr-O-Si at 448.91 and 448.87 cm −1 as well as Al-Zr-Si-O at 353.36 and 351.61 cm −1 , respectively. 46,47 Hence, the formation of interfacial layer for Al x Zr y O z films grown at 800 C and 1000 C were comprised of a mixture of Zr-O-Si and Al-Zr-Si-O compounds. The detection of a larger area under Raman peaks associated to these compound for Al x Zr y O z films grown at 1000 C dictated the formation of the thickest interfacial layer, which was in agreement with the acquisition of the largest total oxide thickness (183.57 nm).…”
Section: Resultsmentioning
confidence: 99%
“…It was perceived that Al x Zr y O z films grown at 800 C and 1000 C have disclosed the detection of Raman features allied with Zr-O-Si at 448.91 and 448.87 cm −1 as well as Al-Zr-Si-O at 353.36 and 351.61 cm −1 , respectively. 46,47 Hence, the formation of interfacial layer for Al x Zr y O z films grown at 800 C and 1000 C were comprised of a mixture of Zr-O-Si and Al-Zr-Si-O compounds. The detection of a larger area under Raman peaks associated to these compound for Al x Zr y O z films grown at 1000 C dictated the formation of the thickest interfacial layer, which was in agreement with the acquisition of the largest total oxide thickness (183.57 nm).…”
Section: Resultsmentioning
confidence: 99%
“…irkon (ZrSiO4) merupakan sumber utama untuk senyawa zirkonium berderajat industri, seperti ZrOCl2, Zr(SO4)2, ZrO2, ZrC, dll. [1]. Senyawa zirkonium derajat industri ini banyak digunakan dalam industri modern, seperti energi nuklir, katalis, penunjang katalis, keramik, sel bahan bakar, pigmen, dan sensor gas otomatis [1] [2].…”
Section: Pendahuluanunclassified
“…[1]. Senyawa zirkonium derajat industri ini banyak digunakan dalam industri modern, seperti energi nuklir, katalis, penunjang katalis, keramik, sel bahan bakar, pigmen, dan sensor gas otomatis [1] [2]. Zirkon merupakan salah satu mineral yang paling stabil secara kimiawi, hal ini akibat dari ikatan koordinasi yang kuat dari bisdisphenoid ZrO8 dalam struktur tetragonal dengan tetrahedron SiO4 [1].…”
Section: Pendahuluanunclassified
See 1 more Smart Citation
“…Silica is more affiliative to capture CaO and form CaSiO 3 , and this result is quite similar to that reported by Wang. 25 Meanwhile, both of them can be reduced and alloyed to the ZrSi phase. Hence, in the rst hour of electrolysis, decomposition reactions and oxygen removal rather than carbiding reaction occurred on the cathode.…”
Section: The Reaction Pathwaymentioning
confidence: 99%