Preparation and characterisation of aluminium zirconium oxide for
            <scp>metal‐oxide‐semiconductor</scp>
            capacitor

Quah, Hock Jin; Hassan, Z.; Lim, Way Foong

doi:10.1002/er.5693

Cited by 2 publications

(1 citation statement)

References 63 publications

(152 reference statements)

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“…Based on this theory, we have prepared epitaxial BaTiO 3 (110) film on TiO 2 -buffered GaAs (001) substrates in our previous studies and studied the epitaixial and electrical qualities (Liu et al, 2017). Until now, the oxygen vacancy has been widely studied for its great influence on the physical and chemical properties of oxide films (Lim and Cheong, 2013;Lim and Cheong, 2014;Quah et al, 2020). In this study, we investigated the interface quality between TiO 2 and GaAs, including the oxygen vacancies, interfacial diffusion, lattice mismatch, and their relationships.…”

Section: Introductionmentioning

confidence: 99%

Formation and Effect of Deposited Thin TiO2 Layer With Compressive Strain and Oxygen Vacancies on GaAs (001) Substrate

Zhou

Deng

et al. 2022

Front. Mater.

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The integration of metal oxides and GaAs semiconductors is quite attractive for its potential applications, but interfacial diffusion and lattice mismatch usually cause huge challenges toward achieving high-performance electronic devices. In this article, we reported a thin layer of epitaxial TiO2 (110) on a GaAs (001) substrate with significant compressive strain, lattice distortion, and oxygen vacancies, where the oxygen vacancies proved to be the critical factor to induce the compressive strain and lattice distortion. In this case, the lattice mismatches between this compressed TiO2 (110) and GaAs (001) surface were calculated to be as small as 1.3 and 0.24% along the [110] and [001] orientations of TiO2, respectively. Further, no Ga-oxides or As-oxides were found at the interface, indicating that the TiO2 layer inhibited the diffusion of Ga and As atoms effectively. In summary, TiO2 film can be grown epitaxially on GaAs (001) substrates with non-negligible compressive strain, lattice distortion, oxygen vacancies, and a high-quality interface. This study also provides an approach to integrate different functional oxides on TiO2-buffered GaAs for various GaAs-based electronic devices with higher reliability and performance.

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