In-situ X-ray imaging of III–V strained-layer relaxation processes

Whitehouse, C. R.; Cullis, A. G.; Barnett, S. J.; Usher, B. F.; Clark, Gregory; Keir, A M; Tanner, B. K.; Lunn, B.; Hogg, Jabez; Johnson, Andrew; Lacey, G.; Spirkl, W.; Hagston, W. E.; Jefferson, J. H.; Ashu, P.; Smith, Graeme C.; Martin, Trevor

doi:10.1016/0022-0248(95)80186-g

Cited by 36 publications

(14 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Long-range atomic ordering has been observed in many ternary compound semiconductors, the most prominent ordering is the CuPt B -type ordering in In 0.5 Ga 0.5 P layers grown epitaxially on GaAs(001) under appropriate conditions [33]. Figure 9a shows the atomic arrangement for perfect ordering, which can be described as a (InP) 1 (GaP) 1 superlattice along [1][2][3][4][5][6][7][8][9][10][11] in the zincblende structure. Figure 9b shows an experimental [110] zone axis diffraction pattern of an ordered In 0.5 Ga 0.5 P layer with superlattice reflections of type gþ½(1-11) (g: reflection of the zincblende structure).…”

Section: Retrieving the Path Of Misfit Strain Relaxation By Exploitinmentioning

confidence: 99%

“…Post-growth analysis can only provide reliable information about the final dislocation arrangement but cannot retrieve the sequence of dislocation formation in an individual sample. This is the 4956 E. Spiecker domain of in situ microscopy [3,12] which can be used for monitoring the formation and glide of individual dislocations during the layer growth. However, there is one situation where it is possible to retrieve the sequence of dislocation formation by a post-growth analysis, namely when the layer shows growth-induced long-range atomic ordering.…”

Section: Retrieving the Path Of Misfit Strain Relaxation By Exploitinmentioning

confidence: 99%

“…For the In x Ga 1 -x P layer shown in figure 10, not only [110] but also [1][2][3][4][5][6][7][8][9][10] crosssection samples were studied to reveal the different characteristics of the relaxation via -dislocations (along [1][2][3][4][5][6][7][8][9][10]) and -dislocations (along [110]) separately and to determine the relative order of occurrence of these two types of dislocations. The results can be summarized as follows [32].…”

Section: Characterization Of Misfit Dislocation Network By Temmentioning

confidence: 99%

“…In combination with experimental methods, such as cathodoluminescence (CL) in scanning electron microscopy [2], X-ray topography (XRT) [3], or spatially averaging methods, such as X-ray diffraction (XRD) [4,5], TEM has contributed a great deal to our current understanding of misfit dislocations and their formation during lattice-mismatched heteroepitaxy [6][7][8]. One advantage of TEM is the high spatial resolution that allows for the characterization of individual dislocations in the high density networks, which are typically present in buffer layers.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Novel TEM methods for large-area analysis of misfit dislocation networks in semiconductor heterostructures

Spiecker

2006

Philosophical Magazine

View full text Add to dashboard Cite

Transmission electron microscopy (TEM) is a powerful tool for detailed investigations of individual misfit dislocations and misfit dislocation networks in semiconductor heterostructures. However, the characterization of large numbers of misfit dislocations distributed over large network areas has traditionally been a challenge. Such analyses are important for detailed understanding of phenomena, such as layer mosaicity, that originate from the misfit dislocations, but develop features on a length scale of several tens of microns. Moreover, quantitative interpretations of X-ray diffraction data, based on models that describe the arrangement of misfit dislocations in statistical terms, call for validation by a large-area analysis with microscopic details. In this paper, novel TEM sample preparation and analysis methods are presented, which allow for the efficient study of large numbers of misfit dislocations and provide new insight into the formation of misfit-dislocation networks. The methods discussed are: (i) a double-bevel-polish (DBP) sample preparation for systematic depth-sensitive large-area plan-view TEM imaging of three-dimensional misfit-dislocation networks, (ii) a bevel-polish and cleavage (BPC) sample preparation for efficient large-area Burgers vector analysis of misfit-dislocation networks, (iii) the use of bend contours for large-area plan-view analysis of the Burgers vectors of misfit dislocations in single networks and (iv) the post-growth retrieval of the sequence of dislocation formation by studying antiphase boundaries formed during dislocation glide in layers showing long-range atomic ordering. The feasibility of each method is demonstrated and their potential applications discussed.

show abstract

Section: Retrieving the Path Of Misfit Strain Relaxation By Exploitinmentioning

confidence: 99%

Section: Retrieving the Path Of Misfit Strain Relaxation By Exploitinmentioning

confidence: 99%

Section: Characterization Of Misfit Dislocation Network By Temmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Novel TEM methods for large-area analysis of misfit dislocation networks in semiconductor heterostructures

Spiecker

2006

Philosophical Magazine

View full text Add to dashboard Cite

show abstract

“…(i) Nucleation kinetics was discussed for example by Houghton (1990) and Perovic andHoughton (1993, 1995) for Ge,Sil-,/Si, Whltehouse et al (1995) for In,Gal-,As/GaAs, or by Wagner and Paufler (1993) for In,Gal-,As/InP; the influence of the initial substrate dislocation density and the capability of each system to develop its own nucleation mechanism when the initial defect density in the substrate is too low were clearly demonstrated (Perovic and Houghton 1995, Whitehouse et al 1995. and their movement is thermally activated between room temperature and the deposition temperature.…”

mentioning

confidence: 92%