In
 0.69
 Al
 0.31
 As
 0.41
 Sb
 0.59
 /In
 0.27
 Ga
 0.73
 Sb double-heterojunction bipolar transistors with InAs
 0.66
 Sb
 0.34
 contact layers

Champlain, James G.; Magno, R.; Bass, R.; Park, D.; Boos, J.B.

doi:10.1049/el.2010.1727

Cited by 3 publications

(2 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…1 Due to a very high carrier mobility, the material is also investigated in the development of high-electron mobility transistors (HEMTs) 2 and hetero-junction bipolar transistors (HBTs). 3 However, growth of InAs 1Àx Sb x materials is complicated from a material perspective, and optimized buffer layers are required for each desired As/Sb composition. 4 An alternative to forming InAs 1Àx Sb x layer-by-layer is to grow the material in the shape of nanowires, where epitaxial and dislocation-free materials with various As/Sb compositions can be formed on the same starting substrate.…”

mentioning

confidence: 99%

Electrical properties of InAs1−xSbx and InSb nanowires grown by molecular beam epitaxy

Thelander

Caroff

Plissard

et al. 2012

Applied Physics Letters

View full text Add to dashboard Cite

Results of electrical characterization of Au nucleated InAs1−xSbx nanowires grown by molecular beam epitaxy are reported. An almost doubling of the extracted field effect mobility compared to reference InAs nanowires is observed for a Sb content of x = 0.13. Pure InSb nanowires on the other hand show considerably lower, and strongly diameter dependent, mobility values. Finally, InAs of wurtzite crystal phase overgrown with an InAs1−xSbx shell is found to have a substantial positive shift in threshold voltage compared to reference nanowires.

show abstract

mentioning

confidence: 99%

Electrical properties of InAs1−xSbx and InSb nanowires grown by molecular beam epitaxy

Thelander

Caroff

Plissard

et al. 2012

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…This is a factor of 3 lower power than comparable InP-based LNAs at the same frequency. In addition, antimonide-based semiconductors have been used to fabricate low-power heterojunction bipolar transistors [3], heterostructure barrier varactors for use as frequency multipliers [4], and p-n diodes for THz mixer applications [5].…”

Section: Introductionmentioning

confidence: 99%

Antimonide-Based Compound Semiconductors for Low-Power Electronics

Bennett¹,

Boos²

2013

View full text Add to dashboard Cite

Public reporting burden for the collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection of information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing this burden, to Washington Headquarters Services, Directorate for Information Operations and Reports, 1215 Jefferson Davis Highway, Suite 1204, Arlington VA 22202-4302. Respondents should be aware that notwithstanding any other provision of law, no person shall be subject to a penalty for failing to comply with a collection of information if it does not display a currently valid OMB control number. REPORT DATE

show abstract

Growth and optimization of InxGayAl1−x−ySb buffer layers for electronic and optoelectronic applications

Magno

Glaser

Podpirka

et al. 2015

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

View full text Add to dashboard Cite

InxGayAl1−x−ySb alloys have been grown by molecular beam epitaxy for use as a buffer layer for growing semiconductors on GaAs substrates with lattice constants beyond that of AlSb. This is an extension of the use of AlxGa1−xSb alloys to accommodate for the lattice mismatch with semi-insulating GaAs substrates. The growth of In0.21Ga0.19Al0.6Sb with a 6.2 Å lattice constant on semi-insulating GaAs substrates is the focus of this work. Several measures of the quality of a 1 μm-thick In0.21Ga0.19Al0.6Sb layer improved when the growth temperature was increased from 460 to 600 °C. Atomic force microscopy root-mean-square values decreased from 2.9 to 1.8 nm and the peak-to-valley values decreased from 17.7 to 9.7 nm. In addition, double crystal x-ray diffraction ω-2Θ spectra linewidths decreased from 568 to 482 arc sec. At the lower growth temperatures, several photoluminescence (PL) peaks associated with radiative recombination from regions with different alloy compositions were found. However, on increasing the growth temperature a single PL line was observed, strongly suggesting a more uniform alloy composition.

show abstract

In _0.69 Al _0.31 As _0.41 Sb _0.59 /In _0.27 Ga _0.73 Sb double-heterojunction bipolar transistors with InAs _0.66 Sb _0.34 contact layers

Cited by 3 publications

References 9 publications

Electrical properties of InAs1−xSbx and InSb nanowires grown by molecular beam epitaxy

Electrical properties of InAs1−xSbx and InSb nanowires grown by molecular beam epitaxy

Antimonide-Based Compound Semiconductors for Low-Power Electronics

Growth and optimization of InxGayAl1−x−ySb buffer layers for electronic and optoelectronic applications

Contact Info

Product

Resources

About

In 0.69 Al 0.31 As 0.41 Sb 0.59 /In 0.27 Ga 0.73 Sb double-heterojunction bipolar transistors with InAs 0.66 Sb 0.34 contact layers

Cited by 3 publications

References 9 publications

Electrical properties of InAs1−xSbx and InSb nanowires grown by molecular beam epitaxy

Electrical properties of InAs1−xSbx and InSb nanowires grown by molecular beam epitaxy

Antimonide-Based Compound Semiconductors for Low-Power Electronics

Growth and optimization of InxGayAl1−x−ySb buffer layers for electronic and optoelectronic applications

Contact Info

Product

Resources

About

In _0.69 Al _0.31 As _0.41 Sb _0.59 /In _0.27 Ga _0.73 Sb double-heterojunction bipolar transistors with InAs _0.66 Sb _0.34 contact layers