In-volume structuring of silicon using picosecond laser pulses

Kämmer, H.; Matthäus, Gabor; Nolte, Stefan; Chanal, Margaux; Utéza, O.; Grojo, David

doi:10.1007/s00339-018-1715-1

Cited by 29 publications

(33 citation statements)

References 21 publications

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“…For comparison, focusing at NA = 0.56 does not allow us to achieve any bulk modification with 2-ps pulses. While we could have employed higher repetition rates, we choose to perform the exposures at 100 kHz for safely avoiding any thermal accumulation on a shot-to-shot basis [11,16].…”

Section: Resultsmentioning

confidence: 99%

“…In particular, we have recently investigated in-volume structuring of Si using pulses at 1.55 µm with durations varying from 0.8 to 10 ps. We found that permanent modification in the bulk was achievable, but multipulse processing with our longest pulse duration of 10 ps was a requirement [11]. In a previous work, extreme focusing was identified as a spatial optimization to reduce the peak power and prefocal nonlinear interactions for femtosecond pulses [7].…”

Section: Introductionmentioning

confidence: 84%

“…This is taken as clear evidence of the persistence of competing nonlinear effects affecting the delivered laser energy density at the focus. It explains the difficulties in the previous attempts that aimed at controlled internal laser structuring of Si in the picosecond regime [11]. From this study, we retrieve conditions for repeatable writing and the successful inscription of data at separated surface and volume planes of a Si wafer.…”

Section: Introductionmentioning

confidence: 94%

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Competing Nonlinear Delocalization of Light for Laser Inscription Inside Silicon with a 2- µ m Picosecond Laser

Chambonneau

Lavoute²,

Gaponov³

et al. 2019

Phys. Rev. Applied

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The metrology of laser-induced damage usually finds a single transition from 0% to 100% damage probability when progressively increasing the laser energy in experiments. We observe that picosecond pulses at 2-µm wavelength focused inside silicon provide a response that strongly deviates from this. Supported by nonlinear propagation simulations and energy flow analyses, we reveal an increased light delocalization for near critical power conditions. This leads to a nonmonotonic evolution of the peak delivered fluence as a function of the incoming pulse of the energy, a situation more complex than the clamping of the intensity until now observed in ultrafast regimes. Compared to femtosecond lasers, our measurements show that picosecond sources lead to reduced thresholds for three-dimensional (3D) writing inside silicon that is highly desirable. However, strong interplays between nonlinear effects persist and should not be ignored for the performance of future technological developments. We illustrate this aspect by carefully retrieving from the study the conditions for a demonstration of 3D data inscription inside a silicon wafer.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 84%

Section: Introductionmentioning

confidence: 94%

See 1 more Smart Citation

Competing Nonlinear Delocalization of Light for Laser Inscription Inside Silicon with a 2- µ m Picosecond Laser

Chambonneau

Lavoute²,

Gaponov³

et al. 2019

Phys. Rev. Applied

Self Cite

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“…These include relatively established and rapidly growing application of multi-photon polymerization [15], which typically uses second-harmonic of the Erlasers, eye-safe remote sensing, which outperforms performance at 1 μm. In addition, there are exciting developments regarding 3D laser processing of silicon using pulsed Er-fiber lasers [16][17][18][19].…”

Section: Introductionmentioning

confidence: 99%

175 fs-long pulses from a high-power single-mode Er-doped fiber laser at 1550 nm

Elahi

Kalaycıoğlu

et al. 2017

Optics Communications

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Development of Er-doped ultrafast lasers have lagged behind the corresponding developments in Yb-and Tmdoped lasers, in particular, fiber lasers. Various applications benefit from operation at a central wavelength of 1.5 m and its second harmonic, including emerging applications such as 3D processing of silicon and 3D printing based on two-photon polymerization. We report a simple, robust fiber master oscillator power amplifier operating at 1.55 m, implementing chirp pulse amplification using single-mode fibers for diffraction-limited beam quality. The laser generates 80 nJ pulses at a repetition rate of 43 MHz, corresponding to an average power of 3.5 W, which can be compressed down to 175 fs. The generation of short pulses was achieved using a design which is guided by numerical simulations of pulse propagation and amplification and manages to overturn gain narrowing with self-phase modulation, without invoking excessive Raman scattering processes. The seed source for the two-stage amplifier is a dispersion-managed passively mode-locked oscillator, which generates a ∼40 nm-wide spectrum and 1.7-ps linearly chirped pulses.

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“…Within the last two decades, numerous attempts have been performed to overcome these limitations . Recently, localized modifications in the bulk of silicon using ultrashort laser pulses have been demonstrated . This resulted in the first demonstration of waveguides written with fs laser pulses at a wavelength of 1550 nm by Pavlov et al .…”

Section: Introductionmentioning

confidence: 99%

Origin of Waveguiding in Ultrashort Pulse Structured Silicon

Kämmer

Matthäus

Lammers

et al. 2018

Laser & Photonics Reviews

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The origin of waveguiding in the bulk of silicon after sub‐ps laser inscription is investigated. Locally resolved Raman measurements of waveguide cross sections and along the propagation axis reveal highly localized crystal deformations. These modifications consist of highly confined regions of silicon with a disturbed crystal structure accompanied with strain. This transformation is responsible for a local increase of the refractive index allowing localized waveguiding. On the basis of near‐field measurements at an excitation wavelength of 1550 nm, the absolute value of the refractive index change is estimated to be in the range of 10−3.

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In-volume structuring of silicon using picosecond laser pulses

Cited by 29 publications

References 21 publications

Competing Nonlinear Delocalization of Light for Laser Inscription Inside Silicon with a 2- µ m Picosecond Laser

Competing Nonlinear Delocalization of Light for Laser Inscription Inside Silicon with a 2- µ m Picosecond Laser

175 fs-long pulses from a high-power single-mode Er-doped fiber laser at 1550 nm

Origin of Waveguiding in Ultrashort Pulse Structured Silicon

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