InAlAs–InGaAs Double-Gate HEMTs on Transferred Substrate

Wichmann, Nicolas; Duszynski, I.; Wallart, X.; Bollaert, S.; Cappy, A.

doi:10.1109/led.2004.829029

Cited by 47 publications

(31 citation statements)

References 6 publications

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“…Fig. 7 presents simulated quantum and semi-classical results compared with the experimental results of a long channel double gate HEMT (gate lengths for bottom and top gates are 1.2 µm and 1.4 µm respectively) [24]. The structure of the simulated long channel DGHEMT is shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Quantum Modeling of Nanoscale Symmetric Double-Gate InAlAs/InGaAs/InP HEMT

Verma¹,

Gupta²,

Gupta³

et al. 2013

JSTS:Journal of Semiconductor Technology and Science

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Abstract-The aim of this work is to investigate and study the quantum effects in the modeling of nanoscale symmetric double-gate InAlAs/InGaAs/InP HEMT (High Electron Mobility Transistor). In order to do so, the carrier concentration in InGaAs channel at gate lengths (L g ) 100 nm and 50 nm, are modelled by a density gradient model or quantum moments model. The simulated results obtained from the quantum moments model are compared with the available experimental results to show the accuracy and also with a semi-classical model to show the need for quantum modeling. Quantum modeling shows major variation in electron concentration profiles and affects the device characteristics. The two triangular quantum wells predicted by the semi-classical model seem to vanish in the quantum model as bulk inversion takes place. The quantum effects thus become essential to incorporate in nanoscale heterostructure device modeling.

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Section: Resultsmentioning

confidence: 99%

Quantum Modeling of Nanoscale Symmetric Double-Gate InAlAs/InGaAs/InP HEMT

Verma¹,

Gupta²,

Gupta³

et al. 2013

JSTS:Journal of Semiconductor Technology and Science

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“…Two opposite gate electrodes control the total electron density in the channels as well as the carrier shift between them in DM operation. The only difference with respect to a DG--HEMT [2][3][4][5][6] is that the channel is divided into two regions: a high-µ undoped channel and a low-µ channel…”

Section: Physical Modelmentioning

confidence: 99%

“…To further improve their behavior, alternative solutions based on an evolution of the standard HEMT design have been proposed, as the double-gate (DG) HEMT, a HEMT with two gates placed on each side of the conducting InGaAs channel [2][3][4][5][6]. The progress of the DG-HEMT technology has allowed the design and fabrication of III-V velocity modulation transistors (VMTs) [7,8].…”

Section: Introductionmentioning

confidence: 99%

Monte Carlo Analysis of the Dynamic Behavior οf InAlAs/InGaAs Velocity Modulation Transistors: A Geometrical Optimization

et al. 2011

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The influence of the geometry on the dynamic behavior of InAlAs/InGaAs velocity modulation transistors is analyzed by means of a Monte Carlo simulator in order to optimize the performance of this new type of transistor. In velocity modulation transistors, based on the topology of a double-gate high electron mobility transistor, the source and drain electrodes are connected by two channels with different mobilities, and electrons are transferred between both of them by changing the gate voltages in differential mode. Consequently, the drain current is modulated while keeping the total carrier density constant, thus in principle avoiding capacitance charging/ discharging delays. However, the low values taken by the transconductance, as well as the high capacitance between the two gates in differential-mode operation, lead to a deficient dynamic performance. This behavior can be geometrically optimized by increasing the mobility difference between the two channels, by increasing the channel width and, mainly, by reducing the gate length, with a higher immunity to short channel effects than the traditional architectures.

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“…It is well established by now that the key to improve microwave performance lies in shrinking the gate length [4] and simultaneously maintaining a high aspect ratio to avoid short channel effects. But this scaling rule posed a physical limit on conventional HEMT structures and resulted in new device structure as a DG-HEMT, fabricated by transferred substrate technique [5][6], that not only minimized the short channel effects but also provided a better charge control through the second gate.…”

Section: Introductionmentioning

confidence: 99%