InAlN/GaN HEMTs: a first insight into technological optimization

Kuzmı́k, J.; Kostopoulos, A.; Konstantinidis, G.; Carlin, J.‐F.; Georgakilas, A.; Pogány, D.

doi:10.1109/ted.2005.864379

Cited by 129 publications

(83 citation statements)

References 20 publications

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“…9 High-performance InAlN/GaN highelectron mobility transistors ͑HEMTs͒ have actually been fabricated and reported. 2,3,5,10 If we expand the scope to include nonlattice-matched InAlN/GaN heterostructures, the band gap, E g , of InAlN can be greatly changed from 6.2 eV ͑AlN͒ to 0.67 eV ͑InN͒. 11 It has theoretically been predicted that the decrease in the conduction band offset, ⌬E C , according to the increase in the In molar fraction is much larger than decrease in the valence band offset, ⌬E V .…”

Section: Introductionmentioning

confidence: 99%

Measurement of valence-band offsets of InAlN/GaN heterostructures grown by metal-organic vapor phase epitaxy

Akazawa

Gao

Hashizume

et al. 2011

Journal of Applied Physics

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The valence band offsets, ⌬E V , of In 0.17 Al 0.83 N / GaN, In 0.25 Al 0.75 N / GaN, and In 0.30 Al 0.70 N / GaN heterostructures grown by metal-organic vapor phase epitaxy were evaluated by using x-ray photoelectron spectroscopy ͑XPS͒. The dependence of the energy position and the full width at half maximum of the Al 2p spectrum on the exit angle indicated that there was sharp band bending caused by the polarization-induced electric field combined with surface Fermi-level pinning in each ultrathin InAlN layer. The ⌬E V values evaluated without taking into account band bending indicated large discrepancies from the theoretical estimates for all samples. Erroneous results due to band bending were corrected by applying numerical calculations, which led to acceptable results. The evaluated ⌬E V values were 0.2Ϯ 0.2 eV for In 0.17 Al 0.83 N / GaN, 0.1Ϯ 0.2 eV for In 0.25 Al 0.75 N / GaN, and 0.0Ϯ 0.2 eV for In 0.30 Al 0.70 N / GaN. Despite the large decrease of around 1.0 eV in the band gap of InAlN layers according to the increase in the In molar fraction, the decrease in ⌬E V was as small as 0.2 eV. Therefore, the change in band-gap discontinuity was mainly distributed to that in conduction band offset.

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Section: Introductionmentioning

confidence: 99%

Measurement of valence-band offsets of InAlN/GaN heterostructures grown by metal-organic vapor phase epitaxy

Akazawa

Gao

Hashizume

et al. 2011

Journal of Applied Physics

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“…1,2 The possibility to grow epitaxial layers that are lattice matched to GaN at an indium content x of approximately 17% is the important feature of the Al 1−x In x N alloy. 3 At the lattice-matched Al 0.83 In 0.17 N / GaN, the heterostructure interface minimizes strain, and thereby it also minimizes cracking and/or dislocation formation.…”

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confidence: 99%

“…However, a high excess leakage current of the reverse-biased Schottky contact is defined as the most important for high quality device reliability. 2 Several investigations have been conducted for the basic mechanisms of gate leakage current, 4-10 and leakage current reduction. 11 Zhang et al 7 analyzed the leakage current mechanisms in the Schottky contacts of both n-GaN and AlGaN/GaN at different temperatures and concluded that tunneling current dominates at temperatures below 150 K, whereas the Frenkel-Poole emission dominates at temperatures higher than 250 K. Miller et al 8 have shown that the reverse-bias leakage in AlGaN/GaN can be analyzed in a conventional tunneling model.…”

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confidence: 99%

Leakage current by Frenkel–Poole emission in Ni/Au Schottky contacts on Al0.83In0.17N/AlN/GaN heterostructures

Arslan

Bütün

Özbay

2009

Applied Physics Letters

137

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In order to determine the reverse-bias leakage current mechanisms in Schottky diodes on Al0.83In0.17N/AlN/GaN heterostructures, the temperature-dependent current-voltage measurements were performed in the temperature range of 250–375 K. In this temperature range, the leakage current was found to be in agreement with the predicted characteristics, which is based on the Frenkel–Poole emission model. The analysis of the reverse current-voltage characteristics dictates that the main process in leakage current flow is the emission of electrons from a trapped state near the metal-semiconductor interface into a continuum of states which associated with each conductive dislocation.

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“…Especially, latticematched In x Al 1−x N ͑x = 0.17-0.18͒ / GaN heterostructures can provide a 2DEG with a high density exceeding 2 ϫ 10 13 cm −2 . [1][2][3][4][5][6] Actually, InAlN/GaN high-electron mobility transistors with high performance have been reported. 2,3,5 To generate a high density 2DEG, a large conduction-band offset, ⌬E C , in addition to the strong polarization-induced effects, 7 is required.…”

mentioning

confidence: 99%

Small valence-band offset of In0.17Al0.83N/GaN heterostructure grown by metal-organic vapor phase epitaxy

Akazawa

Matsuyama

Hashizume

et al. 2010

Applied Physics Letters

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The valence-band offset of a lattice-matched In0.17Al0.83N/GaN heterostructure grown by metal-organic vapor phase epitaxy (MOVPE) was investigated by x-ray photoelectron spectroscopy (XPS). Atomic force microscopy and angle-resolved XPS indicated that a thin In0.17Al0.83N (2.5 nm) layer was successfully grown by MOVPE on GaN. The XPS result showed that the valence band offset was 0.2±0.3 eV. This result indicates that the conduction-band offset at the In0.17Al0.83N/GaN interface is large, i.e., 0.9 to 1.0 eV, and occupies a large part of the entire band discontinuity.

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InAlN/GaN HEMTs: a first insight into technological optimization

Cited by 129 publications

References 20 publications

Measurement of valence-band offsets of InAlN/GaN heterostructures grown by metal-organic vapor phase epitaxy

Measurement of valence-band offsets of InAlN/GaN heterostructures grown by metal-organic vapor phase epitaxy

Leakage current by Frenkel–Poole emission in Ni/Au Schottky contacts on Al0.83In0.17N/AlN/GaN heterostructures

Small valence-band offset of In0.17Al0.83N/GaN heterostructure grown by metal-organic vapor phase epitaxy

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