InAs/AlGaSb heterojunction tunnel field‐effect transistor with tunnelling in‐line with the gate field

Li, Rui; Lu, Yeqing; Chae, Seung‐Hoon; Zhou, Guangle; Liu, Qingmin; Chen, Chen; Rahman, Mohammad Shahriar; Vasen, T.; Qin, Zhang; Fay, Patrick; Kosel, T.H.; Wistey, Mark A.; Xing, Huili Grace; Koswatta, Siyuranga O.; Seabaugh, Alan

doi:10.1002/pssc.201100241

Cited by 43 publications

(22 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Spatially separated confinement of electrons and holes, signature of type-II band alignment, initiated InAs/GaSb core-shell nanowires realization [174,175]. Field-effect transistors (FETs) [176,177] and thermo photovoltaic (TPV) [178] T2SL devices are another examples of unconventional applications of T2SL material system.…”

Section: Discussionmentioning

confidence: 99%

InAs/GaSb Type-II Superlattice Detectors

Plis

2014

Advances in Electronics

106

View full text Add to dashboard Cite

InAs/(In,Ga)Sb type-II strained layer superlattices (T2SLs) have made significant progress since they were first proposed as an infrared (IR) sensing material more than three decades ago. Numerous theoretically predicted advantages that T2SL offers over present-day detection technologies, heterojunction engineering capabilities, and technological preferences make T2SL technology promising candidate for the realization of high performance IR imagers. Despite concentrated efforts of many research groups, the T2SLs have not revealed full potential yet. This paper attempts to provide a comprehensive review of the current status of T2SL detectors and discusses origins of T2SL device performance degradation, in particular, surface and bulk dark-current components. Various approaches of dark current reduction with their pros and cons are presented.

show abstract

Section: Discussionmentioning

confidence: 99%

InAs/GaSb Type-II Superlattice Detectors

Plis

2014

Advances in Electronics

106

View full text Add to dashboard Cite

show abstract

“…Al 0.45 Ga 0.55 Sb source with W AlGaSb = 10 nm and InAs channel and drain with T InAs = 4 nm. This aluminum composition is chosen to match both with experiments [1] and with previous simulations [4]. The W AlGaSb and T InAs are fixed for all the simulations unless otherwise stated.…”

Section: Methodsmentioning

confidence: 99%

“…Experimental demonstrations of TFETs with p-type AlGaSb and n-type InAs [1], [2] with gate field in-line with the tunneling direction (in-line TFET) have been performed, and these devices have also been simulated based on the drift-diffusion and the dynamic nonlocal (DNL) path band-to-band model [3]. These DNL simulations have projected that the optimized device designs with an undercut length of 10 nm could achieve a minimum SS of 7 mV/decade [4].…”

Section: Introductionmentioning

confidence: 99%

Quantum Transport in AlGaSb/InAs TFETs With Gate Field In-Line With Tunneling Direction

Jiang

Tan

et al. 2015

IEEE Trans. Electron Devices

Self Cite

View full text Add to dashboard Cite

Quantum transport simulations are performed in tunneling FETs (TFETs) with the gate electric field in-line with the tunneling junction direction (in-line TFETs). Charge self-consistency and thermalization effects are included in a semiclassical Poisson solution to compute the electrostatic potential. The obtained potential is then used for current calculation with the ballistic nonequilibrium Green's function method (NEGF) in the tight binding basis. It is shown that the NEGF method predicts a higher subthreshold swing than the often-used dynamic nonlocal (DNL) path band-to-band method. The NEGF method accounts for the direct source-drain tunneling, which is underestimated in the DNL path approach in the studied geometries. Undercut is shown to be essential to obtain switching slope below 60 mV/decade in the in-line TFETs.

show abstract

“…The double peak re- sults from the subbands of the quantized InAs layer, which is sandwiched between the ZrO 2 gate oxide layer and the wideband gap AlSb layer [21]. Performance comparison of published III-V TFETs is shown in Table I (see Refs. [6], [8]- [11], [17], [19], [25], [26]). …”

Section: Electrical Characterization Of Overlap Gate Devicementioning

confidence: 99%

Quantum Well InAs/AlSb/GaSb Vertical Tunnel FET With HSQ Mechanical Support

Zeng

Kuo

Hsu

et al. 2015

IEEE Trans. Nanotechnology

View full text Add to dashboard Cite

A type-III (broken gap) band alignment heterojunction vertical in-line InAs/AlSb/GaSb tunnel FET, including a 2-nmthin AlSb tunneling barrier is demonstrated. The impact of overlap and underlap gate is studied experimentally and supported further by quasi-stationary 2-D TCAD Sentaurus device simulations. Hydrogen silsesquioxane is used as a novel mechanical support structure to suspend the 10-nm-thin InAs drain with enough undercut to be able to demonstrate an overlap gate architecture. The overlap gate InAs/AlSb/GaSb TFET shows an ON current density of 22 μA/μm 2 at V G S = V D S = 0.4 V and the subthreshold slope is 194 mV/decade at room temperature and 46 mV/decade at 100 K.Index Terms-Heterojunction, nanofabrication, TCAD simulation, tunneling barrier, type III (broken gap) band alignment, vertical in-line tunnel FET. 1536-125X

show abstract

InAs/AlGaSb heterojunction tunnel field‐effect transistor with tunnelling in‐line with the gate field

Cited by 43 publications

References 4 publications

InAs/GaSb Type-II Superlattice Detectors

InAs/GaSb Type-II Superlattice Detectors

Quantum Transport in AlGaSb/InAs TFETs With Gate Field In-Line With Tunneling Direction

Quantum Well InAs/AlSb/GaSb Vertical Tunnel FET With HSQ Mechanical Support

Contact Info

Product

Resources

About