InAs quantum dots embedded in silicon

Effects of growth temperature and arsenic pressure on size distribution and density of InAs quantum dots on Si (001)

“…Excess indium is likely to segregate and form macroscopic indium droplets. This has been observed on Si (001) by Hansen et al with As 4 /In BEP ratio of around 3 [26], although we do not observed this phenomena using similar growth conditions with our system. For InAs grown on GaAs substrate, low arsenic pressure may completely suppress the dot formation [20].…”

Growth and characterization of InAs quantum dots on Si(001) substrates

“…SAQDs consist of only a few monolayers (MLs) of the active materials, allowing the integration of materials with large lattice mismatch without dislocation. One of such materials combination is InAs SAQD on Si [4][5][6].…”

Growth of InAs quantum dots and dashes on silicon substrates: Formation and characterization

“…Formation of InAs QDs embedded in silicon matrix at a substrate temperature of 370 1C has been observed by RHEED after deposition of 1.7MLs of InAs independent of the As/In flux ratio [2]. In addition, the thermal mismatch caused by the different thermal expansion coefficients of III-V film and substrate, results in an additional strain by cooling down the material from growth to room temperature.…”

“…The luminescence efficiency of an indirect gap matrix can be dramatically improved by inserting a narrow and a direct-gap material like InAs or InGaAs in silicon matrix. So far, only few details on the growth mechanism of InAs on silicon substrates have been provided in literature [2,10]. In this contribution, we concentrate on basic growth studies addressing mainly morphological properties of quantum-dot like structures grown directly on silicon surfaces with a main emphasis on surface preparation and growth parameters.…”