Inclusion-like defects in InP substrates and related defects in heteroepitaxial and Zn diffused layers

Franzosi, P.; Salviati, G.; Scaffardi, M.; Audino, R.; Taiariol, F.

doi:10.1016/0022-0248(88)90371-5

Cited by 3 publications

(1 citation statement)

References 9 publications

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“…Despite all the stated reservations about past work on InP, several points of interest continually arise from it and require further investigation. These may be split into two groups; chemical and electrical phenomena [8,20,[33][34][35][36][37][38]. From a chemical viewpoint, there are the observations of many of the researchers regarding the interaction of zinc and phosphorus.…”

Section: Previous Work On Inpmentioning

confidence: 99%

Four-point probe electrical measurements on p-n-p InP structures

Sequeira¹,

Santos²

2007

Braz. J. Phys.

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The diffusion of zinc into n-type InP has been studied by four-point probe electrical measurements on homogeneously doped crystals at 750 o C. The zinc carrier concentration in the diffused layer was approximately 3 x 10 18 cm −3 and its mobility was assumed to be about 40 cm 2 V −1 s −1. It was observed that the concentration of free carriers throughout the entire diffused region is always less than the number of introduced impurity atoms. Possible reasons are discussed to explain the observed differences. Moreover this non-correlation phenomenon did provide substantial backing to the Hall Effect and C-V measurements that are being carried out to further analyse the Zn-InP diffused layer.

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Section: Previous Work On Inpmentioning

confidence: 99%

Four-point probe electrical measurements on p-n-p InP structures

Sequeira¹,

Santos²

2007

Braz. J. Phys.

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Photoluminescence microscopy on InP substrates and GaInAs epilayers grown by MOVPE

Wang

Scholz

Schuster

et al. 1989

Journal of Crystal Growth

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Inspection of n-type InP crystals by scanning photoluminescence measurements

Krawczyk

Krafft

Klingelhofer

et al. 1992

Semicond. Sci. Technol.

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Room temperature scanning photoluminescence (SPL) measurements were performed on n-type (Sn-doped, S-doped and undoped) InP crystals provided by various suppliers. It was found that defects and non-uniformities such as doping striations, dislocations and subsurface defects are associated with specific 'signatures' in SPL images, regardless of the type of doping and the origin of the samples. SPL measurements appear to be useful for routine inspection of this material because they are fast and non-destructive.

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Inclusion-like defects in InP substrates and related defects in heteroepitaxial and Zn diffused layers

Cited by 3 publications

References 9 publications

Four-point probe electrical measurements on p-n-p InP structures

Four-point probe electrical measurements on p-n-p InP structures

Photoluminescence microscopy on InP substrates and GaInAs epilayers grown by MOVPE

Inspection of n-type InP crystals by scanning photoluminescence measurements

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