Incorporation of aluminum and oxygen in dimethylaluminum methoxide doped GaAs during organometallic vapor phase epitaxy

Hall-effect and deep-level transient spectroscopy measurements have been performed on GaAs epilayers grown by organometallic vapor-phase epitaxy and intentionally doped with diethyltellurium and dimethylaluminum methoxide (DMAlMO). The DMAlMO doping was observed to compensate shallow tellurium donors for concentrations as high as 1019 cm−3, producing fully compensated high-resistivity epilayers. Seven DMAlMO-induced deep levels have been observed in the GaAs band gap with activation energies of 0.25, 0.30, 0.37, 0.40, 0.58, 0.74, and 0.93 eV. Less than 5% of all oxygen atoms were present in the layer in the form of isolated off-center substitutional oxygen corresponding to the 0.58 eV level. The major traps located at 0.74 and 0.93 eV below the conduction band have been attributed to complexes of aluminum and oxygen involving two and one aluminum atoms, respectively. Both of these levels are deep acceptors responsible for the compensation of shallow donors.

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Deep-center oxygen-related photoluminescence in GaAs doped with dimethylaluminum methoxide during organometallic vapor phase epitaxy

Park

Skowroński

et al. 1995

Journal of Applied Physics

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Infrared oxygen-related photoluminescence measurements of GaAs epilayers grown by organometallic vapor phase epitaxy (OMVPEj and intentionally doped with dimethylaluminum methoxide (DMALMO) are reported. The photoluminescence emissions at 1.08, 0.95, 0.81, and 0.62 eV are detected. The centers responsible for the emissions at 0.81 and 0.62 eV are tentatively attributed to Al-0-Ga and Al-O-Al, respectively, based on correlation with layer growth conditions. The growth parameters lead to information on the number of nearest-neighbor aluminum associated with oxygen. The Al-0-Ga center responsible for the 0.81 emission is also studied for Al,Gar,,As(x=0.05-0.9) layers grown by OMVPE without DMALMO. The 0.81 eV emission is attributed to the transition from the conduction band to the Al-0-Ga center. The center shows the lattice relaxation exemplified by the Franck-Condon shift of 0.15 eV. The thermal ionization energy of this acceptor is determined to be 0.56 eV above the valence band. 0 1995 American Institute of Physics.

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Incorporation of aluminum and oxygen in dimethylaluminum methoxide doped GaAs during organometallic vapor phase epitaxy

Cited by 4 publications

References 32 publications

Transportation in MOCVD of traces of oxygenated aluminum and gallium organometallics

Transportation in MOCVD of traces of oxygenated aluminum and gallium organometallics

Compensation of shallow donors in dimethylaluminum methoxide-doped GaAs

Deep-center oxygen-related photoluminescence in GaAs doped with dimethylaluminum methoxide during organometallic vapor phase epitaxy

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