Incorporation of group III and group V elements in chemical beam epitaxy of GaInAsP alloys

Transport properties of hydrogenated p-GaInAs doped with carbon

“…The growth apparatus and procedures were previously described. 9 Prior to the growth of the GaInAs films, a buffer layer of undoped InP was grown on 2 in. semi-insulating ͑100͒InP substrates.…”

Group V incorporation in InGaAsP grown on InP by gas source molecular beam epitaxy

“…Typically, in gas source molecular beam epitaxy ͑GSMBE͒ and chemical beam epitaxy ͑CBE͒, the group V species are supplied primarily in the form of As 2 and P 2 from the cracking of arsine ͑AsH 3 ͒ and phosphine ͑PH 3 ͒ in a high temperature ͑Ϸ1000°C͒ cell. Figure 1 shows the results of several authors [1][2][3][4][5][6][7] in which the As content in the solid, y, is plotted as a function of the arsine flow fraction, Y ϭF͑AsH 3 ͒/͓F͑AsH 3 ͒ϩF͑PH 3 ͔͒, where F denotes the hydride flow inputs to the cracker cell. Data are shown for lattice-matched InGaAsP layers grown on ͑100͒ InP substrates by GSMBE ͑open and filled data points͒ and CBE ͑designated by ϩ and ϫ͒.…”

Surface morphology induced InAs quantum dot or dash formation on InGaAsP/InP (100)

“…These are clear indications that the formation of InAs QDs or QDashes is induced by the buffer layer morphology which, in particular in CBE, is very sensitive to the growth temperature [15,16] and less by the InAs growth conditions themselves. Once, the buffer layer is rough, QDashes are formed while for the same InAs growth temperature on a smooth buffer layer QDs develop.…”