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We report here the characteristic features of a newly developed dielectric encapsulant cap layer, which after adequate thermal treatments, leads to a reproducible local alloy disorder in several III–V quantum well (QW) structures. Data are presented to demonstrate its universality, namely, its ability to promote alloy-disorder free of charge carriers either on group III or group V sublattice depending on the type of the QW structure.

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We show here, for the first time, that disordering (alloy mixing) on group III sublattice of GaAlAs-GaAs quantum well (QW) structures can be accomplished by the introduction of a group V site substitutional donor impurity. This is achieved by performing donor sulfur diffusions at 850 °C (for varied durations 1 to 14 h) under open-tube conditions in molecular beam epitaxy as well as metalorganic chemical vapor deposition grown GaAlAs-GaAs QW structures. Using simple photoluminescence measurements at room temperature, we provide relevant evidence that the degree of alloy mixing (and so the resulting Al composition) is dependent on the diffused S concentration.