New encapsulant source for III–V quantum well disordering

Rao, E. V. K.; Hamoudi, A.; Krauz, P.; Juhel, M.; Thibierge, H.

doi:10.1063/1.114060

Cited by 31 publications

(18 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Our results do not conflict with those reported by Rao et al 10 because the addition of small amounts of P ͑1 wt%͒ does not drastically change 12 the properties of SiO 2 :P as compared with SiO 2 and hence both caps can have a promoting effect on intermixing.…”

Section: Suppression Of Quantum Well Intermixing In Gaas/algaas Lasersupporting

confidence: 52%

“…Recently, the use of a SiO 2 layer doped with phosphorus ͑SIO 2 :P͒ has been reported by Rao et al 10 to be a ''universal'' intermixing source for III-V compounds. SiO 2 :P with 1% by weight of P 11 was used to induce intermixing in nominally undoped GaAs/AlGaAs shallow multiple QW structures by furnace annealing at a relatively low temperature ͑850°C͒, and therefore a masking dielectric cap to prevent intermixing and for surface protection was not required during annealing.…”

Section: Suppression Of Quantum Well Intermixing In Gaas/algaas Lasermentioning

confidence: 99%

See 1 more Smart Citation

Suppression of quantum well intermixing in GaAs/AlGaAs laser structures using phosphorus-doped SiO2 encapsulant layer

Cusumano

Ooi

Helmy

et al. 1997

Journal of Applied Physics

View full text Add to dashboard Cite

Large blueshift in InGaAs/InGaAsP laser structure using inductively coupled argon plasma-enhanced quantum well intermixing Suppression of interdiffusion in GaAs/AlGaAs quantum-well structure capped with dielectric films by deposition of gallium oxide J. Appl. Phys. 92, 3579 (2002); 10.1063/1.1503857 Impurity-free intermixing of GaAs/AlGaAs quantum wells using SiO x capping: Effect of nitrous oxide flow rate A phosphorus-doped silica ͑SiO 2 :P͒ cap containing 5 wt% P has been demonstrated to inhibit the bandgap shifts of p-i-n and n-i-p GaAs/AlGaAs quantum well laser structures after rapid thermal processing. The intermixing suppression has been attributed to the fact that SiO 2 :P is more dense and void free compared with standard SiO 2 together with a strain relaxation effect of the cap layer during annealing. Band gap shift differences as large as 100 meV have been observed from samples capped with SiO 2 and with SiO 2 :P. The n-i-p structure showed a higher degree of intermixing compared to p-i-n structure. This behaviour has been attributed to the rise of Fermi level in the n doped structure, through which the formation energy of Ga vacancies is reduced compared to the p doped structure.

show abstract

Section: Suppression Of Quantum Well Intermixing In Gaas/algaas Lasersupporting

confidence: 52%

Section: Suppression Of Quantum Well Intermixing In Gaas/algaas Lasermentioning

confidence: 99%

Suppression of quantum well intermixing in GaAs/AlGaAs laser structures using phosphorus-doped SiO2 encapsulant layer

Cusumano

Ooi

Helmy

et al. 1997

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…The different interdiffusion behavior is believed to be due to the existence of a SiO 2 :P encapsulant layer. 4 The encapsulant layer introduces intrinsic defects, such as vacancy and interstitial defects, into the semiconductor, and these enhance the interdiffusion rates. Depending on the characteristics of the intrinsic defects, the enhancement in interdiffusion could be in the cation or in the anion sublattice.…”

Section: Department Of Physics Seoul National University Seoul Koreamentioning

confidence: 99%

Determination of interdiffusion coefficients of cations and anions in InGaAs/InP superlattice

Ryu

Choe

Jeong

1997

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…A microwave power of 500 W was used to deposit the dielectric caps. 59,60 This exchange of group-III vacancies on group-V intersitials is a consequence of the kick-out mechanism. Similar results have previously been obtained for the ground state for n = 1.63.…”

Section: Influence Of Cap Layer Composition On the Qw Optical Tranmentioning

confidence: 99%

Photoreflectance investigations of quantum well intermixing processes in compressively strained InGaAsP∕InGaAsP quantum well laser structures emitting at 1.55μm

Podhorodecki

Andrzejewski

Kudrawiec

et al. 2006

Journal of Applied Physics

View full text Add to dashboard Cite

Large blueshift in InGaAs/InGaAsP laser structure using inductively coupled argon plasma-enhanced quantum well intermixing Influence of dielectric deposition parameters on the In 0.2 Ga 0.8 As / GaAs quantum well intermixing by impurity-free vacancy disordering Enhanced band-gap blueshift due to group V intermixing in InGaAsP multiple quantum well laser structures induced by low temperature grown InPWe have investigated the effects of interdiffusion and its technological parameters on the subband structure in compressively strained InGaAsP quantum wells ͑QWs͒ using photoreflectance and photoluminescence techniques. p-i-n laser structures with three QWs were grown by gas source molecular beam epitaxy and capped with dielectric films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition and annealed using a rapid thermal annealing process. A numerical real-time wave-packet propagation method including static electric field, strain in the wells and barriers, and error function interface diffusion modeling is used to calculate the transition energies for the diffused QWs. It has been shown that the shift of the energy levels due to the interdiffusion related changes of the well confinement potential profile is a consequence of two competing processes: a change of the well width and an effective increase of the band gap energy resulting in a net blueshift of all optical transitions. Moreover, it has been found that quantum well intermixing does not significantly influence the built-in electric fields distribution.

show abstract

New encapsulant source for III–V quantum well disordering

Cited by 31 publications

References 0 publications

Suppression of quantum well intermixing in GaAs/AlGaAs laser structures using phosphorus-doped SiO2 encapsulant layer

Suppression of quantum well intermixing in GaAs/AlGaAs laser structures using phosphorus-doped SiO2 encapsulant layer

Determination of interdiffusion coefficients of cations and anions in InGaAs/InP superlattice

Photoreflectance investigations of quantum well intermixing processes in compressively strained InGaAsP∕InGaAsP quantum well laser structures emitting at 1.55μm

Contact Info

Product

Resources

About