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Large blueshift in InGaAs/InGaAsP laser structure using inductively coupled argon plasma-enhanced quantum well intermixing Suppression of interdiffusion in GaAs/AlGaAs quantum-well structure capped with dielectric films by deposition of gallium oxide J. Appl. Phys. 92, 3579 (2002); 10.1063/1.1503857 Impurity-free intermixing of GaAs/AlGaAs quantum wells using SiO x capping: Effect of nitrous oxide flow rate A phosphorus-doped silica ͑SiO 2 :P͒ cap containing 5 wt% P has been demonstrated to inhibit the bandgap shifts of p-i-n and n-i-p GaAs/AlGaAs quantum well laser structures after rapid thermal processing. The intermixing suppression has been attributed to the fact that SiO 2 :P is more dense and void free compared with standard SiO 2 together with a strain relaxation effect of the cap layer during annealing. Band gap shift differences as large as 100 meV have been observed from samples capped with SiO 2 and with SiO 2 :P. The n-i-p structure showed a higher degree of intermixing compared to p-i-n structure. This behaviour has been attributed to the rise of Fermi level in the n doped structure, through which the formation energy of Ga vacancies is reduced compared to the p doped structure.

We apply the time-of-flight (TOF) technique to study space charge and carrier trapping effects in the organic materials N,N'-diphenyl-N,N'-bis(3- methylphenyl)-1,1-biphenyl-4,4'-diamine (TPD) and tris(8-hydroxyquinolato) aluminum (Alq3). This is carried out by changing the applied electric field, the laser pulse intensity, and the repetition rate together with environmental conditions in air or in vacuum. We report for the first time, to the best of our knowledge, a clearly nondispersive electron transport in TPD due to the absence of deep traps. Conversely, Alq3 exhibits a dispersive electron transport. However, this can be partially recovered by leaving the sample in high vacuum for several hours. This behavior is ascribed to a reduced concentration of O2-related deep traps

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